C30B 25/10
Heating of the reaction chamber or the substrate
C30B25/10 (Heating of the reaction chamber or the substrate) appears on 1,063 US grants and 1,082 published applications in this corpus.
Search patents in C30B- Granted patents
- 1,063
- Published applications
- 1,082
- Assignees
- 522
- Inventors
- 2,556
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 6 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 4 | 0 |
| 1988 | 7 | 0 |
| 1989 | 18 | 0 |
| 1990 | 17 | 0 |
| 1991 | 26 | 0 |
| 1992 | 24 | 0 |
| 1993 | 21 | 0 |
| 1994 | 25 | 0 |
| 1995 | 15 | 0 |
| 1996 | 19 | 0 |
| 1997 | 29 | 0 |
| 1998 | 40 | 0 |
| 1999 | 26 | 0 |
| 2000 | 41 | 0 |
| 2001 | 33 | 8 |
| 2002 | 29 | 26 |
| 2003 | 19 | 33 |
| 2004 | 16 | 40 |
| 2005 | 27 | 46 |
| 2006 | 25 | 33 |
| 2007 | 18 | 38 |
| 2008 | 22 | 36 |
| 2009 | 15 | 40 |
| 2010 | 25 | 51 |
| 2011 | 16 | 32 |
| 2012 | 27 | 42 |
| 2013 | 26 | 39 |
| 2014 | 31 | 41 |
| 2015 | 33 | 49 |
| 2016 | 33 | 43 |
| 2017 | 30 | 38 |
| 2018 | 42 | 41 |
| 2019 | 38 | 29 |
| 2020 | 24 | 36 |
| 2021 | 29 | 43 |
| 2022 | 29 | 49 |
| 2023 | 26 | 55 |
| 2024 | 38 | 84 |
| 2025 | 43 | 54 |
| 2026 | 25 | 56 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Heating apparatus, CVD equipment including the heating apparatus22 Sep 2026US 12,742,241 B2Advanced Micro-Fabrication Equipment Inc. China
- Highly reflective metallic alloys for components of semiconductor processing equipment, and related methods4 Aug 2026US 12,698,570 B2APPLIED Materials.Inc.
- Semiconductor processing chamber, semiconductor processing equipment and vapor epitaxy equipment4 Aug 2026US 12,698,571 B2Advanced Micro-Fabrication Equipment Inc. China
- Crystalline wafers and process for forming crystalline wafers28 Jul 2026US 12,696,692 B2II-Vi Advanced Materials, LLC
- Epitaxial gallium nitride alloy ferroelectronics28 Jul 2026US 12,696,699 B2The Regents of the University of Michigan
- Dynamic Seal Deposition Apparatus for Epitaxy8 Oct 2026US 2026/0308803 A1Atomic Nano Materials and Equipment Co., Ltd.
- Method and apparatus for suppression of defects during gallium oxide epitaxy8 Oct 2026US 2026/0308804 A1Kyma Technologies, Inc.
- Chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing8 Oct 2026US 2026/0309552 A1APPLIED Materials.Inc.
- Systems, methods, and computer program products for substrate processing1 Oct 2026US 2026/0297804 A1ASM IP Holding B. V.
- Method for the controlled deposition of an oxide layer of a target oxide on a substrate in a tle system, and tle system24 Sep 2026US 2026/0286568 A1Max-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V.
Most cited
By later US patents
- Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween832US 5,781,693 AAPPLIED Materials.Inc. · 1998
- Rapid thermal processing apparatus for processing semiconductor wafers624US 5,444,217 AMoore Epitaxial, Inc. · 1995
- Epitaxial reactor having a wall which is protected from deposits620US 5,027,746 AU. S. Philips Corporation · 1991
- Induction heated pancake epitaxial reactor616US 5,062,386 AEpitaxy Systems, Inc. · 1991
- Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer585US 5,180,435 AResearch Triangle Institute · 1993