Method and apparatus for suppression of defects during gallium oxide epitaxy

Abstract

The present disclosure provides a reaction system for growing gallium oxide films, including a reaction chamber housing a substrate; a source of gallium halide gas in fluid communication with the reaction chamber via a first gas injector positioned to direct the gallium halide gas toward the substrate; a source of oxygen-containing gas in fluid communication with the reaction chamber via a second gas injector positioned to direct the oxygen-containing gas toward the substrate; and a source of halogen-containing gas in fluid communication with the reaction chamber via a third gas injector positioned to direct the halogen-containing gas toward the substrate, the third gas injector positioned between the first and second gas injectors. A method growing a gallium oxide film epitaxially on a surface of a substrate is also provided.

Dependencies are inferred from the claim text.