Method for the controlled deposition of an oxide layer of a target oxide on a substrate in a tle system, and tle system

Method for the controlled deposition of an oxide layer of an target oxide on a substrate in a thermal laser epitaxy system, the target oxide comprising a defined stoichiometry and being formed from one or more evaporated and/or sublimated source materials and oxygen originating from a gaseous oxidizing agent, the TLE system further comprising a reaction chamber and one or more laser sources for providing laser beams within the reaction chamber,

• comprising the steps of:
• a) providing the substrate and a first deposition source in the reaction chamber, wherein the first deposition source contains an elemental material as first source material,
• b) filling the reaction chamber with a reaction gas comprising one or more oxidizing agents provided by a gas system of the TLE system,
• c) evaporating and/or sublimating the first source material by impinging a laser beam of the TLE system on the first source material with an intensity below a plasma generation threshold of the first source material, for providing a flux of evaporated and/or sublimated first source material and/or of a first binary oxide formed from the first source material with the oxidizing agent, wherein the flux is directed towards the substrate,
• d) heating the substrate to a deposition temperature by a laser beam of the TLE system, wherein the deposition temperature of the substrate is equal or higher to a desorption temperature such that the first deposition source and/or the first binary oxide desorb at least partly from the substrate,
• e) forming the target oxide by combining the one or more evaporated and/or sublimated source materials and oxygen originating from the one or more oxidizing agents and depositing the target oxide as oxide layer onto the substrate, wherein the formation of the target oxide and the deposition of the oxide layer on the substrate is controlled by controlling the filling of the reaction chamber with the reaction gas in step b) and/or by controlling the rate of the evaporated and/or sublimated first source material at the substrate in step c) and/or by controlling the deposition temperature in step d).