Semiconductor processing chamber, semiconductor processing equipment and vapor epitaxy equipment

A semiconductor processing chamber, configured to process a substrate, comprising:

• a chamber with a confined processing space, the chamber comprising an upper cover capable of permeating heat radiation, and the confined processing space being configured to accommodate the substrate and process the substrate;
• a pressure-bearing shell, connected with a partial area of the chamber to form a confined space, at least a partial area of the upper cover being in the confined space;
• a pressure-regulating device, configured to regulate pressure of the confined space;
• and further,
• a lower cover arranged oppositely to the upper cover, at least a partial area of the lower cover being in an atmospheric environment.

Vapor epitaxy equipment, comprising:

• a chamber frame being hollow, provided with a gas inlet and a gas outlet and configured to introduce process gas to form a silicon-containing epitaxy layer on a substrate, an opening being arranged on one side of the chamber frame;
• an upper cover capable of permeating heat radiation, the upper cover being in matched connection with the opening and arranged on the chamber frame, the upper cover and the chamber frame enclosing a processing space, and the processing space being configured to accommodate the substrate and process the substrate;
• a pressure-bearing shell, arranged above the upper cover and enclosing a confined space with the upper cover or enclosing the confined space with the upper cover and at least part of the chamber frame;
• a pressure-regulating device, configured to regulate pressure of the confined space, the confined space being communicated with an atmospheric environment by the pressure-regulating device;
• and
• a heating lamp group located in the confined space, the heat radiation emitted by the heating lamp group being capable of permeating the upper cover to heat the substrate.