C30B 25/00
Single-crystal growth by chemical reaction of reactive gases
Official title: Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
C30B25/00 (Single-crystal growth by chemical reaction of reactive gases) appears on 6,243 US grants and 6,494 published applications in this corpus.
Search patents in C30B- Granted patents
- 6,243
- Published applications
- 6,494
- Assignees
- 1,862
- Inventors
- 11,194
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 14 | 0 |
| 1977 | 18 | 0 |
| 1978 | 12 | 0 |
| 1979 | 22 | 0 |
| 1980 | 14 | 0 |
| 1981 | 23 | 0 |
| 1982 | 23 | 0 |
| 1983 | 24 | 0 |
| 1984 | 32 | 0 |
| 1985 | 37 | 0 |
| 1986 | 37 | 0 |
| 1987 | 40 | 0 |
| 1988 | 38 | 0 |
| 1989 | 82 | 0 |
| 1990 | 75 | 0 |
| 1991 | 81 | 0 |
| 1992 | 91 | 0 |
| 1993 | 99 | 0 |
| 1994 | 116 | 0 |
| 1995 | 122 | 0 |
| 1996 | 93 | 0 |
| 1997 | 97 | 0 |
| 1998 | 135 | 0 |
| 1999 | 132 | 0 |
| 2000 | 174 | 0 |
| 2001 | 152 | 76 |
| 2002 | 164 | 245 |
| 2003 | 179 | 279 |
| 2004 | 182 | 262 |
| 2005 | 169 | 273 |
| 2006 | 161 | 245 |
| 2007 | 137 | 267 |
| 2008 | 136 | 250 |
| 2009 | 143 | 273 |
| 2010 | 203 | 297 |
| 2011 | 149 | 274 |
| 2012 | 187 | 261 |
| 2013 | 194 | 231 |
| 2014 | 213 | 239 |
| 2015 | 196 | 271 |
| 2016 | 186 | 229 |
| 2017 | 195 | 235 |
| 2018 | 193 | 241 |
| 2019 | 234 | 206 |
| 2020 | 180 | 244 |
| 2021 | 165 | 244 |
| 2022 | 163 | 279 |
| 2023 | 155 | 282 |
| 2024 | 206 | 323 |
| 2025 | 219 | 275 |
| 2026 | 151 | 193 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing of semiconductor manufacturing6 Oct 2026US 12,753,500 B2APPLIED Materials.Inc.
- Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films6 Oct 2026US 12,753,526 B2Wisconsin Alumni Research Foundation
- Silicon carbide single crystal manufacturing apparatus, computing device, and manufacturing method of silicon carbide single crystal6 Oct 2026US 12,753,528 B2Denso Corporation
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Dynamic Seal Deposition Apparatus for Epitaxy8 Oct 2026US 2026/0308803 A1Atomic Nano Materials and Equipment Co., Ltd.
- Method and apparatus for suppression of defects during gallium oxide epitaxy8 Oct 2026US 2026/0308804 A1Kyma Technologies, Inc.
- Gallium nitride material and gallium nitride material manufacturing method8 Oct 2026US 2026/0308805 A1Sumitomo Chemical Company, Limited
- Gallium nitride crystal substrate8 Oct 2026US 2026/0308806 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- CVD Processing chamber1,003US 5,558,717 AAPPLIED Materials.Inc. · 1996
- Apparatus and method for growth of a thin film940US 6,511,539 B1ASM America, Inc. · 2003