Back to results
US 2026/0308805 A1Published application
Gallium nitride material and gallium nitride material manufacturing method
AssigneeSumitomo Chemical Company, Limited
InventorsShota KANEKI, Hajime FUJIKURA, Yoshinobu NARITA
Life of this patent
Estimating the term…
Abstract
There is provided a gallium nitride material having at least a gallium nitride layer, wherein a photoluminescence measurement at room temperature shows that a ratio (I2/I1) of an emission intensity I2 at a wavelength of plus 5 nm of a wavelength of a near-band-edge emission caused by a gallium nitride layer with respect to an emission intensity I1 of the near-band-edge emission is 1.0 or more.
Claims9
A gallium nitride material having at least a gallium nitride layer,
- wherein a photoluminescence measurement at room temperature shows that a ratio (I2/I1) of an emission intensity I2 at a wavelength of plus 5 nm of a wavelength of a near-band-edge emission caused by a gallium nitride layer with respect to an emission intensity I1 of the near-band-edge emission is 1.0 or more.
A gallium nitride material manufacturing method, comprising:
- placing a substrate in a hydride vapor phase epitaxy apparatus;
- growing a gallium nitride layer above the substrate using the hydride vapor phase epitaxy apparatus;
- and
- quickly cooling the gallium nitride layer after growth,
- wherein in the growing the gallium nitride layer, a temperature is increased at a rate of 30° C./min or more until reaching a growth temperature, and in the quickly cooling the gallium nitride layer, a temperature is decreased at a rate of 30° C./min or more during quick cooling.
2 more elements
Dependencies are inferred from the claim text.