Heating apparatus, CVD equipment including the heating apparatus

MOCVD equipment, comprising:

• an airtight reaction chamber;
• a wafer susceptor disposed in the airtight reaction chamber and having a rotation axis, configured to securely hold wafers on an upper surface of the wafer susceptor;
• and
• a heating apparatus comprising:
• a main heater configured to heat the wafer susceptor above;
• and
• a plurality of auxiliary heaters, each of the plurality of auxiliary heaters including two auxiliary pin connectors, wherein the plurality of auxiliary heaters are capable of moving along a radial direction of the wafer susceptor or along a direction of a rotation axis;
• and
• a thermal insulation portion, wherein the thermal insulation portion surrounds the plurality of auxiliary heaters to transfer heat of the plurality of auxiliary heaters to the wafer susceptor;
• wherein the plurality of auxiliary heaters have different distances from the rotation axis, and each of the plurality of auxiliary heaters is configured to independently adjust a local temperature of a zone heated by the main heater;
• wherein the heating apparatus is disposed beneath the wafer susceptor and vertically spaced a distance from the wafer susceptor;
• the heating apparatus is configured to heat the wafer susceptor, and heating powers of the main heater and the plurality of auxiliary heaters are independently controlled.

Chemical vapor deposition equipment, comprising:

• a wafer susceptor having a rotation axis;
• and
• a main heater and a plurality of auxiliary heaters, which are disposed beneath the wafer susceptor and vertically spaced a distance from the wafer susceptor, wherein the main heater is configured to heat the wafer susceptor above, wherein
• different auxiliary heaters have different distances from the rotation axis, and each of the plurality of auxiliary heaters is configured to independently adjusting local temperatures of a zone heated by the main heater;
• a thermal insulative shielding plate is provided beneath the main heater and the plurality of auxiliary heaters, a liquid cooling conduit is provided beneath the thermal insulative shielding plate such that a cooling zone is formed beneath the thermal insulative shielding plate;
• and
• a thermal insulation portion, wherein the thermal insulation portion surrounds the plurality of auxiliary heaters to transfer heat of the plurality of auxiliary heaters to the wafer susceptor;
• each of the plurality of auxiliary heaters includes two auxiliary pin connectors, the two auxiliary pin connectors pass through the thermal insulative shielding plate to the cooling zone below, wherein the plurality of auxiliary heaters are capable of moving along a radial direction of the wafer susceptor or along a direction of a rotation axis.