Crystalline wafers and process for forming crystalline wafers

Abstract

Methods of forming a crystalline wafers or films such as a diamond wafer or film are disclosed. Such a method may include creating a damaged layer in a seed wafer at a depth from a seed wafer upper surface. The seed wafer may include a diamond crystalline structure. The method may also include growing a diamond epitaxial layer on the seed wafer upper surface via a chemical vapor deposition (CVD) process. A growth temperature of the CVD process may convert the damaged layer into a graphitized interface between the seed wafer and the diamond epitaxial layer. The method may further include applying light from a laser to the graphitized interface to separate the diamond epitaxial layer from the seed wafer and obtain the diamond wafer.

Dependencies are inferred from the claim text.