Rapid thermal processing apparatus for processing semiconductor wafers

A semiconductor processing structure comprising:

• a reaction chamber;
• a quartz rotatable susceptor mounted within the reaction chamber, the quartz rotatable susceptor having a first surface and a second surface opposite thereto, the first surface adapted for mounting one of (i) a single substrate and (ii) a plurality of substrates thereon;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said one of (i) said single substrate and (ii) said plurality of substrates, wherein said radiant heat source raises the temperature of said one of (i) said single substrate and (ii) said plurality of substrates to a substantially uniform processing temperature in a time period such that the semiconductor processing structure is characterized as a rapid thermal process reactor and further wherein said first surface of said quartz rotatable susceptor is bead-blasted.

A semiconductor processing structure comprising:

• a reaction chamber;
• a quartz rotatable susceptor mounted within the reaction chamber, the quartz rotatable susceptor having first surface and a second surface opposite thereto, the first surface adapted for mounting one of (i) a single substrate and (ii) a plurality of substrates thereon;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said one of (i) said single substrate and (ii) said plurality of substrates, wherein said radiant heat source raises the temperature of said one of (i) said single substrate and (ii) said plurality of substrates to a substantially uniform processing temperature in a time period such that the semiconductor processing structure is characterized as a rapid thermal process reactor and further wherein said second surface of said quartz rotatable susceptor is flame-polished.

A semiconductor processing structure comprising:

• a reaction chamber;
• a rotatable susceptor mounted within the reaction chamber, wherein the rotatable susceptor includes a first surface and a second surface opposite thereto, the first surface adapted for mounting one of (i) a single substrate and (ii) a plurality of substrates thereon and further wherein said rotatable susceptor includes a pocket;
• a silicon carbide cloth placed in said pocket;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said one of (i) said single substrate and (ii) said plurality of substrates, wherein said radiant heat source raises the temperature of said one of (i) said single substrate and (ii) said plurality of substrates to a substantially uniform processing temperature in a time period such that the semiconductor processing structure is characterized as a rapid thermal process reactor.

A semiconductor processing structure comprising:

• a reaction chamber;
• a rotatable susceptor mounted within the reaction chamber wherein the rotatable susceptor includes a first surface and a second surface opposite thereto, the first surface adapted for mounting one of (i) a single substrate and (ii) a plurality of substrates thereon and further wherein said rotatable susceptor includes a pocket having a depth;
• an insert having an outer edge surface and a maximum dimension less than a maximum dimension of said pocket so that upon placement of said insert into said pocket, a uniform recess is formed between said outer edge of said insert and an outer edge of said pocket;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said one of (i) said single substrate and (ii) said plurality of substrates, wherein said radiant heat source raises the temperature of said one of (i) said single substrate and (ii) said plurality of substrates to a substantially uniform processing temperature in a time period such that the semiconductor processing structure is characterized as a rapid thermal process reactor.

A semiconductor processing structure comprising:

• a reaction chamber;
• a rotatable susceptor mounted within the reaction chamber, the rotatable susceptor having a first surface and a second surface opposite thereto, the first surface adapted for mounting one of (i) a single substrate and (ii) a plurality of substrates thereon;
• a passive heat distribution structure mounted in said reaction chamber in proximity of said second surface of said rotatable susceptor wherein said passive heat distribution structure further comprises silicon carbide cloth contained within a quartz structure;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said one of (i) said single substrate and (ii) said plurality of substrates, wherein said radiant heat source raises the temperature of said one of (i) said single substrate and (ii) said plurality of substrates to a substantially uniform processing temperature in a time period such that the semiconductor processing structure is characterized as a rapid thermal process reactor.

A reactor for processing a plurality of substrates comprising:

• a reaction chamber;
• a rotatable susceptor mounted within the reaction chamber having a first surface and a second surface opposite thereto, the first surface adapted for mounting said plurality of substrates thereon;
• a resistance heater mounted in said reaction chamber in proximity to said second surface of said rotatable susceptor;
• an insulated electrical supply line connected to said resistance heater wherein insulation on said insulated electrical supply line has a temperature rating that is less than a reaction chamber operating temperature;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said plurality of substrates wherein said radiant heat source raises the temperature of said plurality of substrates to a substantially uniform processing temperature in a time period such that said reactor for processing a plurality of substrates is characterized as a rapid thermal process reactor.

A reactor for processing a plurality of substrates comprising:

• a reaction chamber;
• a quartz rotatable susceptor mounted within the reaction chamber, the quartz rotatable susceptor having a first surface and a second surface opposite thereto, the first surface adapted for mounting a plurality of substrates thereon;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said plurality of substrates wherein said radiant heat source raises the temperature of said plurality of substrates to a substantially uniform processing temperature in a time period such that said reactor for processing said plurality of substrates is characterized as a rapid thermal process reactor and further wherein said first surface of said quartz rotatable susceptor is bead-blasted.

A reactor for processing a plurality of substrates comprising:

• a reaction chamber;
• a quartz rotatable susceptor mounted within the reaction chamber, the quartz rotatable susceptor having a first surface and a second surface opposite thereto, the first surface adapted for mounting a plurality of substrates thereon;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said plurality of substrates wherein said radiant heat source raises the temperature of said plurality of substrates to a substantially uniform processing temperature in a time period such that said reactor for processing said plurality of substrates is characterized as a rapid thermal process reactor and further wherein said second surface of said quartz rotatable susceptor is flame-polished.

A reactor for processing a plurality of substrates comprising;

• a reaction chamber;
• a rotatable susceptor mounted within the reaction chamber, wherein the rotatable susceptor includes a first surface and a second surface opposite thereto, the first surface adapted for mounting a plurality of substrates thereon, and further wherein said rotatable susceptor includes a plurality of pockets;
• silicon carbide cloth wherein said silicon carbide cloth is placed in each of said plurality of pockets;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said plurality of substrates wherein said radiant heat source raises the temperature of said plurality of substrates to a substantially uniform processing temperature in a time period such that said reactor for processing said plurality of substrates is characterized as a rapid thermal process reactor.

A reactor for processing a plurality of substrates comprising:

• a reaction chamber;
• a rotatable susceptor mounted within the reaction chamber, wherein the rotatable susceptor includes a first surface and a second surface opposite thereto, the first surface adapted for mounting a plurality of substrates thereon, and further wherein said rotatable susceptor includes a plurality of pockets wherein each of said pockets has a depth;
• an insert having an outer edge surface and a maximum dimension less than a maximum dimension of one of said pockets so that upon placement of said insert into said one of said pockets, a uniform recess is formed between said outer edge of said insert and an outer edge of said one of said pockets;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said plurality of substrates wherein said radiant heat source raises the temperature of said plurality of substrates to a substantially uniform processing temperature in a time period such that said reactor for processing said plurality of substrates is characterized as a rapid thermal process reactor.

A reactor for processing a plurality of substrates comprising:

• a reaction chamber;
• a rotatable susceptor mounted within the reaction chamber, the quartz rotatable susceptor having a first surface and a second surface opposite thereto, the first surface adapted for mounting a plurality of substrates thereon;
• a passive heat distribution structure mounted in said reaction chamber in proximity of said second surface of said rotatable susceptor wherein said passive heat distribution structure further comprises silicon carbide cloth contained within a quartz structure;
• and
• a radiant heat source mounted outside said reaction chamber so that radiant heat from said radiant heat source directly heats said plurality of substrates wherein said radiant heat source raises the temperature of said plurality of substrates to a substantially uniform processing temperature in a time period such that said reactor for processing said plurality of substrates is characterized as a rapid thermal process reactor.

A rapid thermal process reactor comprising:

• a reaction chamber having a water-cooled cylindrical side wall, a forced-air-cooled quartz top wall, and a circular water-cooled bottom wall;
• a radiant heat source mounted external to said reaction chamber and over said forced-air-cooled quartz top wall;
• a rotatable susceptor mounted within the reaction chamber, and having a first surface and a second surface opposite thereto, the first surface adapted for mounting one of (i) a single substrate and (ii) a plurality of substrates thereon;
• a passive heat distribution structure mounted in said reaction chamber in proximity of said second surface of said rotatable susceptor;
• a susceptor support having a first end supporting said rotatable susceptor and a second end outside said reaction chamber;
• an annular shaft having:
• a wall defining a central cylindrical hole;
• a first end fixedly attached to said passive heat distribution structure;
• and
• a second end;
• wherein said second end of said shaft is exterior to said reaction chamber;
• and
• said susceptor support extends through said central cylindrical hole;
• and
• a susceptor positioning mechanism coupled to said annular shaft and to said susceptor support, wherein said susceptor positioning mechanism moves said annular shaft and said susceptor support in a first direction, thereby moving said rotatable susceptor in said first direction.

A reactor for processing substrates comprising:

• a reaction chamber vessel;
• a table mounted about said reaction chamber vessel wherein said table has a top surface;
• a shell;
• a track extending in a first direction and rigidly affixed to said table;
• a coupler movably connected to said track and having a plurality of connectors selectively connectable to and disconnectable from said shell;
• wherein as said coupler is moved along said track, said shell is moved in a first direction from a first position contacting said table top surface to a second position removed from said table top surface;
• and
• upon disconnecting one of said plurality of connectors from said shell when said shell is in said second position, said shell is movable in a second direction substantially perpendicular to said first direction, thereby allowing access, unrestricted by said shell, to said reaction chamber vessel.