C30B 25/06
By reactive sputtering
Official title: by reactive sputtering
C30B25/06 (By reactive sputtering) appears on 49 US grants and 65 published applications in this corpus.
Search patents in C30B- Granted patents
- 49
- Published applications
- 65
- Assignees
- 52
- Inventors
- 148
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 2 |
| 2011 | 0 | 2 |
| 2012 | 2 | 1 |
| 2013 | 0 | 6 |
| 2014 | 1 | 1 |
| 2015 | 3 | 13 |
| 2016 | 3 | 4 |
| 2017 | 4 | 7 |
| 2018 | 7 | 4 |
| 2019 | 2 | 3 |
| 2020 | 6 | 4 |
| 2021 | 2 | 2 |
| 2022 | 3 | 1 |
| 2023 | 2 | 5 |
| 2024 | 2 | 3 |
| 2025 | 3 | 5 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices14 Jul 2026US 12,680,192 B2National Technology & Engineering Solutions of Sandia, LLC
- Reactive gas modulation for group III/IV compound deposition systems24 Feb 2026US 12,559,860 B1
- Forming nanotwinned regions in a ceramic coating at a tunable volume fraction30 Dec 2025US 12,509,760 B2University of Science and Technology Beijing
- Method for growing a semiconductor assembly and semiconductor assembly9 Dec 2025US 12,494,365 B2Otto-Von-Guericke-Universitat Magdeburg
- Multilayer film structure and method for producing same11 Mar 2025US 12,247,297 B2National Institute for Materials Science
- Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
- Two-Dimensional Materials, Their Composite Thin Films, and the Formation Thereof18 Sep 2025US 2025/0290194 A1
- Laminated structure, method for manufacturing laminated structure, and semiconductor device3 Jul 2025US 2025/0220999 A1Japan Display Inc.
- Multilayer structure, method for producing multilayer structure and semiconductor device19 Jun 2025US 2025/0201554 A1Japan Display Inc.
- Underlying substrate, single crystal diamond laminate substrate and method for producing them15 May 2025US 2025/0154685 A1Shin-Etsu Chemical Co., Ltd.
Most cited
By later US patents
- Planar reactive evaporation apparatus for the deposition of compound semiconducting films19US 4,146,774 AHughes Aircraft Company · 1979
- Planar reactive evaporation method for the deposition of compound semiconducting films17US 4,063,974 AHughes Aircraft Company · 1977
- In situ production of silicon crystals on substrate for use in solar cell construction16US 4,582,560 ASRI International · 1986
- Deposition system for growth of inclined c-axis piezoelectric material structures14US 9,922,809 B2Qorvo US, Inc. · 2018
- Method for producing a beryllium oxide film11US 4,451,499 AFutaba Denshi Kogyo K. K. · 1984