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US 12,494,365 B2Granted
Method for growing a semiconductor assembly and semiconductor assembly
AssigneeOtto-Von-Guericke-Universitat Magdeburg
InventorsArmin Dadgar, Florian Hörich
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Abstract
The disclosure relates to a method for growing a semiconductor assembly. The method includes the steps of providing a silicon substrate and growing two metal nitride layers, each metal nitride layer being grown by means of a metal target and a plasma. For the second metal nitride layer a higher hydrogen content is used, allowing for better crystal quality than in known methods. The disclosure further relates to a semiconductor assembly that is produced accordingly.
Claims19
A method for growing a semiconductor assembly, wherein the method comprises:
- providing a silicon substrate,
- growing a first metal nitride layer on the silicon substrate by way of plasma-assisted atomization via at least one metal target and a first plasma which is generated by supplying a first gas feed comprising at least nitrogen, and
- growing a second metal nitride layer directly on the first metal nitride layer by way of plasma-assisted atomization via at least one metal target and a second plasma which is generated by supplying a second gas feed comprising at least nitrogen or ammonia,
- wherein the second gas feed for growing the second metal nitride layer has a higher ratio of hydrogen atoms to nitrogen atoms than the first gas feed for growing the first metal nitride layer.
1 more element
Dependencies are inferred from the claim text.