Deposition system for growth of inclined c-axis piezoelectric material structures
AssigneeQorvo US, Inc.
InventorsKevin McCarron, John Belsick
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Abstract
Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
Claims23
A deposition system comprising:
- a linear sputtering apparatus comprising a target surface configured to eject metal atoms;
- a substrate table comprising a support surface that is configured to receive at least one wafer and is coupled to a translation element, wherein the translation element is configured to translate the substrate table and the at least one wafer during operation of the linear sputtering apparatus;
- and
- a collimator comprising a plurality of guide members defining a plurality of collimator apertures arranged between the linear sputtering apparatus and the substrate table, the collimator being linearly translatable;
- wherein the target surface is arranged non-parallel to the support surface;
- and
- wherein at least one of the substrate table or the collimator is electrically biased to a potential other than ground.
Dependencies are inferred from the claim text.