Multilayer structure, method for producing multilayer structure and semiconductor device
AssigneeJapan Display Inc.
InventorsHayata AOKI, Masumi NISHIMURA
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Abstract
A multilayer structure includes an amorphous substrate having an insulating surface, an orientation layer on the amorphous substrate; and a semiconductor pattern containing gallium nitride on the orientation layer, the orientation layer has a first region overlapping the semiconductor pattern and a second region not overlapping the semiconductor pattern. A top surface of the second region is positioned lower than a top surface of the first region. The orientation layer has a groove in the second region that extends from a lower end of the semiconductor pattern to the first region, and in a plan view, the groove overlaps the semiconductor pattern.
Claims14
A multilayer structure comprising:
- an amorphous substrate having an insulating surface;
- an orientation layer on the amorphous substrate;
- and
- a semiconductor pattern containing gallium nitride on the orientation layer,
- wherein
- the orientation layer has a first region overlapping the semiconductor pattern and a second region not overlapping the semiconductor pattern.
A method for producing a multilayer structure comprising:
- forming an orientation layer on an amorphous substrate having an insulating surface;
- depositing a semiconductor layer containing gallium nitride on the orientation layer;
- and
- etching the semiconductor layer containing gallium nitride to form a semiconductor pattern on the top surface of the orientation layer, thereby forming a first region overlapping the semiconductor pattern on the orientation layer and a second region not overlapping the semiconductor pattern on the orientation layer.
Dependencies are inferred from the claim text.