C30B 25/18
Characterised by the substrate
Official title: characterised by the substrate
C30B25/18 (Characterised by the substrate) appears on 2,037 US grants and 2,714 published applications in this corpus.
Search patents in C30B- Granted patents
- 2,037
- Published applications
- 2,714
- Assignees
- 828
- Inventors
- 4,235
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 6 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 6 | 0 |
| 1983 | 6 | 0 |
| 1984 | 5 | 0 |
| 1985 | 5 | 0 |
| 1986 | 6 | 0 |
| 1987 | 1 | 0 |
| 1988 | 5 | 0 |
| 1989 | 6 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 7 | 0 |
| 1993 | 15 | 0 |
| 1994 | 16 | 0 |
| 1995 | 15 | 0 |
| 1996 | 11 | 0 |
| 1997 | 16 | 0 |
| 1998 | 17 | 0 |
| 1999 | 16 | 0 |
| 2000 | 19 | 0 |
| 2001 | 14 | 7 |
| 2002 | 24 | 58 |
| 2003 | 42 | 80 |
| 2004 | 45 | 77 |
| 2005 | 34 | 87 |
| 2006 | 48 | 84 |
| 2007 | 39 | 72 |
| 2008 | 41 | 86 |
| 2009 | 42 | 74 |
| 2010 | 71 | 97 |
| 2011 | 49 | 100 |
| 2012 | 70 | 111 |
| 2013 | 71 | 87 |
| 2014 | 102 | 104 |
| 2015 | 88 | 135 |
| 2016 | 87 | 112 |
| 2017 | 93 | 137 |
| 2018 | 103 | 144 |
| 2019 | 131 | 101 |
| 2020 | 107 | 140 |
| 2021 | 87 | 126 |
| 2022 | 76 | 134 |
| 2023 | 77 | 155 |
| 2024 | 111 | 154 |
| 2025 | 119 | 149 |
| 2026 | 73 | 103 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films6 Oct 2026US 12,753,526 B2Wisconsin Alumni Research Foundation
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition15 Sep 2026US 12,735,806 B2Xiamen University
- Silicon carbide single crystal ingot15 Sep 2026US 12,735,807 B2Central Research Institute of Electric Power Industry
- Gallium base substrate, gallium nitride growth substrate, and manufacturing method of gallium nitride base substrate1 Oct 2026US 2026/0297805 A1Denso Corporation
- Apparatus and method of forming a colloid containing layer1 Oct 2026US 2026/0297808 A1APPLIED Materials.Inc.
- Devices comprising a thick (alzga1-z)2o3 layer on a (001) ga2o3 substrate using a (alxga1-x)2o3 buffer layer, and methods of making and use thereof1 Oct 2026US 2026/0304878 A1Ohio State Innovation Foundation
- Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystalline substrate, and method for producing sic polycrystalline substrate1 Oct 2026US 2026/0305193 A1Sumitomo Metal Mining Co., Ltd.
- Systems and methods for heterogeneous diamond face synthesis for in-situ three-dimensional dopant and structure localization24 Sep 2026US 2026/0286569 A1The University of Chicago
Most cited
By later US patents
- Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors721US 5,281,274 AThe United States of America as represented by the Secretary of the Navy · 1994
- Apparatus for and a method of growing thin films of elemental semiconductors671US 5,225,366 AThe United States of America as represented by the Secretary of the Navy · 1993
- Methods of forming films including germanium tin and structures and devices including the films500US 9,396,934 B2ASM IP Holding B. V. · 2016
- Compound semi-conductors and controlled doping thereof493US 5,709,745 AOhio Aerospace Institute · 1998
- Plasma pre-clean module and process477US 9,299,557 B2ASM IP Holding B. V. · 2016