C30B 25/20
The substrate being of the same materials as the epitaxial layer
Official title: the substrate being of the same materials as the epitaxial layer
C30B25/20 (The substrate being of the same materials as the epitaxial layer) appears on 540 US grants and 772 published applications in this corpus.
Search patents in C30B- Granted patents
- 540
- Published applications
- 772
- Assignees
- 223
- Inventors
- 1,080
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 3 |
| 2003 | 4 | 3 |
| 2004 | 4 | 6 |
| 2005 | 3 | 22 |
| 2006 | 2 | 12 |
| 2007 | 5 | 9 |
| 2008 | 9 | 20 |
| 2009 | 8 | 12 |
| 2010 | 11 | 28 |
| 2011 | 10 | 20 |
| 2012 | 15 | 17 |
| 2013 | 15 | 15 |
| 2014 | 21 | 23 |
| 2015 | 14 | 41 |
| 2016 | 27 | 39 |
| 2017 | 34 | 59 |
| 2018 | 43 | 52 |
| 2019 | 56 | 32 |
| 2020 | 47 | 58 |
| 2021 | 32 | 42 |
| 2022 | 28 | 50 |
| 2023 | 24 | 51 |
| 2024 | 42 | 55 |
| 2025 | 50 | 59 |
| 2026 | 26 | 44 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition15 Sep 2026US 12,735,806 B2Xiamen University
- Silicon carbide single crystal ingot15 Sep 2026US 12,735,807 B2Central Research Institute of Electric Power Industry
- Silicon carbide substrate having excellent flatness and low basal plane dislocation density1 Sep 2026US 12,727,219 B2Proterial, Ltd.
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device25 Aug 2026US 12,720,830 B2Denso Corporation
- Gallium base substrate, gallium nitride growth substrate, and manufacturing method of gallium nitride base substrate1 Oct 2026US 2026/0297805 A1Denso Corporation
- Apparatus and method of forming a colloid containing layer1 Oct 2026US 2026/0297808 A1APPLIED Materials.Inc.
- Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystalline substrate, and method for producing sic polycrystalline substrate1 Oct 2026US 2026/0305193 A1Sumitomo Metal Mining Co., Ltd.
- Systems and methods for heterogeneous diamond face synthesis for in-situ three-dimensional dopant and structure localization24 Sep 2026US 2026/0286569 A1The University of Chicago
- Gallium nitride multilayer substrate manufacturing method, gallium nitride multilayer substrate, and gallium nitride single crystal substrate27 Aug 2026US 2026/0250880 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Semiconductor structure152US 6,501,121 B1Motorola, Inc. · 2002
- Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth121US 6,743,291 B2Chartered Semiconductor Manufacturing Ltd. · 2004
- Method to produce germanium layers82US 6,958,254 B2BTG International Limited · 2005
- Epitaxial composite and method of making69US 4,368,098 ARockwell International Corporation · 1983
- System and method for producing synthetic diamond68US 6,582,513 B1Apollo Diamond, Inc. · 2003