Semiconductor structure
AssigneeMotorola, Inc.
InventorsZhiyi Yu, Jamal Ramdani, Ravindranath Droopad
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Abstract
A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such as (A)y(TixM1-x)1-yO3, wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.
Claims22
A high dielectric constant device structure comprising:
- a monocrystalline semiconductor substrate;
- and
- a monocrystalline insulating layer overlying the substrate, the insulating layer comprising Ay(TixM1-x)1-yO3 where A is an alkaline earth metal, M is an element selected from the group consisting of Al, Si, Er, La, Ga, and In, and 0<x<1, 0<y<1.
A high dielectric constant device structure comprising:
- a monocrystalline semiconductor substrate;
- and
- a monocrystalline oxide layer epitaxially grown overlying the substrate, the monocrystalline oxide layer comprising an alkaline earth metal titanate incorporating an additional material to increase the bandgap of the monocrystalline oxide layer.
A high dielectric constant semiconductor device structure comprising:
- a monocrystalline silicon substrate;
- source, drain, and channel regions of a MOS transistor formed in the substrate;
- a monocrystalline gate dielectric epitaxially formed overlying the channel region, the gate dielectric compromising (A)y(TixM1-x)1-yO3 where A is an alkaline earth metal, M is an element selected from the group consisting of Al, Si, Er, La, Ga, and In, and x is less than 1 and greater than or equal to 0.5 and y is greater than zero and less than 1;
- and
- a gate electrode overlying the gate dielectric.
Dependencies are inferred from the claim text.