Method to produce germanium layers
AssigneeBTG International Limited
InventorWerner Seifert
Life of this patent
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Abstract
A method of producing a very large area germanium layer on a silicon substrate, comprises forming an initial layer of germanium on the silicon substrate such that rounded S—K protuberances are produced by lattice mismatch. Oxidation produces silicon dioxide between the protuberances, and a subsequent reduction step exposes the tops of the protuberances. Since the top regions are almost perfectly relaxed and free of stress, these form nucleation sites for the subsequent growth of a final layer of germanium, formed as single crystals each extending from a nucleation site.
Claims38
A method of producing a layer of a desired material, the method comprising:
- a) providing a crystalline substrate having a different lattice constant from said desired material, and depositing said desired material on the substrate such that protuberances having rounded upper surfaces are produced;
- b) filling the areas between the protuberances with a non-crystalline material;
- and
- c) depositing again said desired material, the protuberances serving as growth sites whereby to produce a layer of said desired material.
A semiconductor structure comprising:
- a substrate of silicon,
- protuberances of a desired material formed on a surface of the substrate, said protuberances having rounded upper surfaces, and the desired material having a different lattice constant from that of silicon,
- a layer of non-crystalline material being formed between the protuberances, and
- a layer of said desired material being formed on top of and in contact with, the protuberances.
A method of producing a layer of a desired material, the method comprising:
- a) providing a crystalline substrate having a different lattice constant from said desired material;
- b) producing on the substrate protruding nanostructures having rounded upper surfaces and comprising the desired material;
- c) providing a non-crystalline material in areas between the nanostructures;
- and
- d) depositing said desired material over the substrate, the nanostructures serving as growth sites whereby to produce said layer of said desired material.
A semiconductor structure comprising a crystalline substrate material, protruding nanostructures of a desired material formed on a surface of the substrate material, said nanostructures having rounded upper surfaces, and the desired material having a different lattice constant from that of the substrate material, a layer of non-crystalline material being formed between the nanostructures, and a layer of said desired material being formed in contact with the nanostructures.
Dependencies are inferred from the claim text.