C30B 25/205
The substrate being of insulating material
Official title: {the substrate being of insulating material}
C30B25/205 (The substrate being of insulating material) appears on 53 US grants and 72 published applications in this corpus.
Search patents in C30B- Granted patents
- 53
- Published applications
- 72
- Assignees
- 52
- Inventors
- 168
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 2 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 3 |
| 2014 | 0 | 1 |
| 2015 | 1 | 0 |
| 2016 | 1 | 3 |
| 2017 | 2 | 3 |
| 2018 | 3 | 7 |
| 2019 | 0 | 5 |
| 2020 | 8 | 9 |
| 2021 | 9 | 9 |
| 2022 | 4 | 8 |
| 2023 | 3 | 5 |
| 2024 | 6 | 7 |
| 2025 | 4 | 5 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Anisotropic epitaxial growth of silicon germanium16 Jun 2026US 12,660,522 B2APPLIED Materials.Inc.
- SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer10 Feb 2026US 12,546,030 B2Resonac Corporation
- Laser activated luminescence system19 Aug 2025US 12,392,028 B2Board of Trustees of Michigan State University
- Method for producing a substrate for the epitaxial growth of a layer of a galium-based III-N alloy8 Apr 2025US 12,270,123 B2Soitec
- Single crystal composite synthetic diamond material25 Feb 2025US 12,234,570 B2Element Six (UK) Limited
- Gan crystal and method for producing gan crystal18 Jun 2026US 2026/0168134 A1Mitsubishi Chemical Corporation
- Method for manufacturing group iii nitride single crystal substrate16 Oct 2025US 2025/0320630 A1Shin-Etsu Chemical Co., Ltd.
- Atomic scale fabrication of diamond quantum computers29 May 2025US 2025/0174460 A1Quantum Brilliance Pty Ltd
- Composite substrate, and substrate for epitaxially growing group 13 element nitride8 May 2025US 2025/0146179 A1NGK Insulators, Ltd.
- Sic epitaxial wafer and method of manufacturing sic epitaxial wafer3 Apr 2025US 2025/0109526 A1Resonac Corporation
Most cited
By later US patents
- Epitaxial composite and method of making69US 4,368,098 ARockwell International Corporation · 1983
- Optical quality diamond material53US 7,740,824 B22010
- Thin silicon film electronic device50US 4,180,618 ACorning Glass Works · 1979
- Metalorganic chemical vapor deposition of IVA-IVA compounds and composite41US 4,066,481 ARockwell International Corporation · 1978
- Process for smoothing surfaces of crystalline materials34US 4,339,300 A1982