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US 12,660,522 B2Granted
Anisotropic epitaxial growth of silicon germanium
AssigneeApplied Materials, Inc.
InventorsChia Cheng Chin, Abhishek Dube, Yi-Chiau Huang, Saurabh Chopra
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Abstract
Generally, examples described herein relate to methods and semiconductor processing systems for anisotropically epitaxially growing a material on a silicon germanium (SiGe) surface. In an example, a surface of silicon germanium is formed on a substrate. Epitaxial silicon germanium is epitaxially grown on the surface of silicon germanium. A first growth rate of the epitaxial silicon germanium is in a first direction perpendicular to the surface of silicon germanium, and a second growth rate of the epitaxial silicon germanium is in a second direction perpendicular to the first direction. The first growth rate is at least 5 times greater than the second growth rate.
Claims19
A method for semiconductor processing, the method comprising:
- epitaxially growing a silicon germanium template layer on a substrate, epitaxially growing the silicon germanium template layer comprising using a first germanium source precursor and a first silicon source precursor, and being performed with a first substrate temperature in a range from 600° C. to 650° C., the silicon germanium template layer having a (100) surface of silicon germanium on a substrate, wherein:
- a ratio of a flow rate of the first germanium source precursor and a flow rate of the first silicon source precursor during the epitaxially growing the silicon germanium template layer is between 1:5 and 1.5:1;
- and
- epitaxially growing an epitaxial silicon germanium on the (100) surface of silicon germanium, epitaxially growing the epitaxial silicon germanium comprising using a second germanium source precursor, a dopant precursor comprising boron, and a second silicon source precursor, and being performed at a second substrate temperature, the second germanium source precursor comprising a chlorinated germane gas, wherein:
- a ratio of a flow rate of the second germanium source precursor and a flow rate of the second silicon source precursor during the epitaxially growing the epitaxial silicon germanium is between 1:5 and 1.5:1,
- a first growth rate of the epitaxial silicon germanium being in a first direction perpendicular to the (100) surface of silicon germanium,
- a second growth rate of the epitaxial silicon germanium being in a second direction perpendicular to the first direction, and
- the first growth rate being at least 5 times greater than the second growth rate.
5 more elements
A method for semiconductor processing, the method comprising:
- epitaxially growing a silicon germanium template layer on a substrate, epitaxially growing the silicon germanium template layer comprising using a first germanium source precursor and a first silicon source precursor, and being performed with a first substrate temperature in a range from 600° C. to 650° C., the silicon germanium template layer having a (100) surface of silicon germanium, wherein:
- a flow rate of the first germanium source precursor is between 10 sccm and 200 sccm,
- a flow rate of the first silicon source precursor is between 100 and 1000 sccm, and
- a ratio of the flow rate of the first germanium source precursor and the flow rate of the first silicon source precursor during the epitaxially growing the silicon germanium template layer is between 1:5 and 1.5:1;
- and
- epitaxially growing an epitaxial silicon germanium on the (100) surface of silicon germanium, epitaxially growing the epitaxial silicon germanium comprising using a second germanium source precursor, a dopant precursor comprising boron, and a second silicon source precursor, and being performed at a second substrate temperature, the second germanium source precursor comprising a chlorinated germane gas, wherein:
- a flow rate of the second germanium source precursor is between 10 sccm and 200 sccm,
- a flow rate of the second silicon source precursor is between 100 and 1000 sccm, and
- a ratio of the flow rate of the second germanium source precursor and the flow rate of the second silicon source precursor during the epitaxially growing the epitaxial silicon germanium is between 1:5 and 1.5:1.
6 more elements
A semiconductor processing system comprising:
- a non-transitory computer-readable medium storing instructions that, when executed by a processor, cause a computer system to perform operations of:
- epitaxially growing a silicon germanium template layer on a substrate, epitaxially growing the silicon germanium template layer comprising using a first germanium source precursor, a first silicon source precursor, and an etchant gas comprising at least one of hydrochloric acid (HCl), chlorine (Cl2), hydrogen bromide (HBr), or bromine (Br2), and being performed with a first substrate temperature in a range from 600° C. 650° C., the silicon germanium template layer having a (100) surface of silicon germanium, wherein:
- a flow rate of the first germanium source precursor is between 10 sccm and 200 sccm,
- a flow rate of the first silicon source precursor is between 100 and 1000 sccm, and
- a ratio of the flow rate of the first germanium source precursor and the flow rate of the first silicon source precursor during the epitaxially growing the silicon germanium template layer is between 1:5 and 1.5:1;
- and
- epitaxially growing an epitaxial silicon germanium on the (100) surface of silicon germanium, the (100) surface of silicon germanium being on a substrate, epitaxially growing the epitaxial silicon germanium comprising using a second germanium source precursor, a dopant precursor comprising boron, and a second silicon source precursor, and being performed at a second substrate temperature, the second germanium source precursor comprising a chlorinated germane gas, wherein:
- a flow rate of the second germanium source precursor is between 10 sccm and 200 sccm,
- a flow rate of the second silicon source precursor is between 100 and 1000 sccm, and
- a ratio of the flow rate of the second germanium source precursor and the flow rate of the second silicon source precursor during the epitaxially growing the epitaxial silicon germanium is between 1:5 and 1.5:1.
7 more elements
Dependencies are inferred from the claim text.