Back to results
US 12,546,030 B2Granted
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer
AssigneeResonac Corporation
InventorsKensho Tanaka, Yoshikazu Umeta
Life of this patent
Estimating the term…
Abstract
A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×1014 cm−3 at any position in the plane of the epitaxial layer.
Claims9
A SiC device, comprising:
- a SiC substrate;
- and
- an epitaxial layer of SiC laminated on the SiC substrate,
- wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and
- the concentration of boron is 5.0×1013 cm−3 or less at the center of the epitaxial layer.
2 more elements
A SiC device, comprising:
- a SiC substrate;
- and
- an epitaxial layer of SiC laminated on the SiC substrate,
- wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and
- the concentration of boron is less than 1.0×1014 cm−3 at any position in the plane of the epitaxial layer.
2 more elements
Dependencies are inferred from the claim text.