Gan crystal and method for producing gan crystal
AssigneesMitsubishi Chemical Corporation, National Institute for Materials Science
InventorsTakafumi ODANI, Yuichi OSHIMA
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Abstract
A GaN crystal includes a Ni-doped GaN layer. The Ni-doped GaN layer has a Ni concentration of 1.0×1016 atoms/cm3 or more and 1.0×1020 atoms/cm3 or less. The Ni-doped GaN layer satisfies at least one of: (1) a total donor impurity concentration is less than 2.0×1017 atoms/cm3; or (2) the full width at half maximum of a rocking curve by (004) X-ray diffraction is 50 arcsec or less.
Claims13
A GaN crystal comprising a Ni-doped GaN layer, wherein
- the Ni-doped GaN layer has a Ni concentration of 1.0×1016 atoms/cm3 or more and 1.0×1020 atoms/cm3 or less, and satisfies at least one of requirements (1) and (2) below:
- (1) the Ni-doped GaN layer has a total donor impurity concentration of less than 2.0×1017 atoms/cm3;
- and
- (2) the full width at half maximum of a rocking curve of the Ni-doped GaN layer by (004) X-ray diffraction is 50 arcsec or less.
A method for producing a GaN crystal comprising a Ni-doped GaN layer with a Ni concentration of 1.0×1016 atoms/cm3 or more and 1.0×1020 atoms/cm3 or less by a vapor phase epitaxy method, the method comprising:
- growing the Ni-doped GaN layer using nickel dichloride as a doping precursor.
Dependencies are inferred from the claim text.