Epitaxial composite and method of making
AssigneeRockwell International Corporation
InventorHarold M. Manasevit
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Abstract
An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO.sub.2, or the like, and on III-V semiconductors or alloys. The thin film may be produced in situ on a heated substrate by reaction of an organic compound containing the Group III constituent, typically the alkyl metal organic, such as trimethylgallium and/or triethylgallium with a Group V hydride such as arsine, phosphine and/or stibine.
Claims72
An organo-metallic process for producing an epitaxial film of Group III-V semiconductor disposed on a single crystal substrate, said process employing an open reactor and comprising the steps of:
- heating said substrate in said open reactor,
- introducing into said open reactor a fist material containing a hydride or halide-free alkyl compound of at least one Group V constituent of said semiconductor, and, as a second material, at least one halide-free alkyl compound containing at least one of the Group III constituents of said semiconductor,
- and
- exhausting said open reactor to pressure not greater than one atmosphere.
A process for producing an epitaxial film of a Group III-V semiconductor disposed on a single crystal substrate, said process employing an open reactor having exterior walls defining an interior chamber and comprising the steps of:
- providing a single heated zone within said interior chamber of said open reactor without substantially heating said exterior walls of said reactor,
- heating said substrate in said single, heated zone of said interior chamber of said open reactor, and
- introducing into said reactor a first halide-free material containing at least one Group V constituent of said semiconductor, and, as a second material, at least one halide-free organic alkyl compound containing at least one of the Group III constituents of said semiconductor, and
- exhausting said open reactor to a pressure not greater than one atmosphere.
An organo-metallic process for producing an epitaxial film of a Group III-V semiconductor directly on a single crystal substrate, said process comprising the steps of:
- providing a first material containing a hydride or alkyl of at least one Group V constituent of said semiconductor,
- providing a second, metal-organic source material comprising at least one organic alkyl compound containing at least one of the Group III constituents of said semiconductor,
- disposing said substrate in an open reactor,
- providing a controlled, elevated temperature zone within only the interior of said reactor for heating said substrate to a required temperature for deposition of said film thereon,
- introducing said first and second materials into said reactor and heating said substrate in accordance with said controlled temperature zone to effect the deposition of an epitaxial film of the Group III-V semiconductor on said substrate.
A process for producing an epitaxial film of a Group III-V semiconductor disposed on a single crystal sapphire (.alpha.-aluminum oxide) substrate which process comprises:
- heating a substrate in a reactor with the orientation of the exposed surfaces of the substrate being the (0001), (1123) (0112), (1125), or (1126) crystallographic plane or being about 10.degree. from the (0112) crystallographic plane and introducing into the reactor one or more gaseous hydrides or alkyls of As, Sb and P as Group V constituent and one or more gaseous alkyls of Ga, Al or In as Group III constituent.
A process for producing an epitaxial film of a Group III-V semiconductor disposed on a single crystal spinel substrate, which process comprises heating the substrate in a reactor with the orientation of the exposed surface of the substrate being the (110) crystallographic plane, and introducing into the reactor one or more gaseous hydrides or alkyls of As, Sb and P as Group V constituent, and one or more gaseous alkyls of Ga, Al or In as Group III constituent of the semiconductor, the (100) crystallographic plane of the film thereby deposited being parallel to the exposed plane of the spinel.
Dependencies are inferred from the claim text.