Metalorganic chemical vapor deposition of IVA-IVA compounds and composite

Abstract

A composite comprising a monocrystalline substrate and one or more layers or films of monocrystalline IVA-VIA compounds and/or alloys formed thereon by a chemical vapor deposition process. The composite is formed at a preferred temperature range of approximately 450.degree.-650.degree. C. The IVA-VIA layer(s) are produced by the pyrolysis of a gas mixture containing metalorganic compounds. Where single crystal metallic oxide substrates of rhombohedral structure, such as sapphire, (.alpha.-Al.sub.2 O.sub.3), or of cubic structure, such as magnesium aluminate (spinel), are used for the growth of monocrystalline lead-containing films such as Pb.sub.1-x Sn.sub.x Te, a nucleation layer of lead is preferably formed on the substrate prior to the pyrolysis of the mixed gaseous reactants. Using the present process, epitaxial monocrystalline IVA-VIA compounds and/or alloys can be grown on inorganic metal oxide substrates, such as cubic and rhombohedral oxides, on alkali halides and IIA fluorides, and on II-VI and III-V compounds. The compositions of the films can be varied without removing the composites from the deposition apparatus by changing the ratio of the reactant gases and the reaction temperature. The conductivity type (n-type or p-type) of the films also can be controlled without removing the composites from the deposition apparatus by varying the reactant gas compositions and by incorporating a dopant into the reactant mixtures prior to pyrolysis.

Dependencies are inferred from the claim text.