Systems and methods for heterogeneous diamond face synthesis for in-situ three-dimensional dopant and structure localization

Abstract

A method includes determining a plurality of ratios of growth rates. The method includes etching an array of pits into a first portion of a substrate including single crystal diamond. The method includes filling each pit of the array of pits with a dopant at a first growth rate based on the plurality of ratios of growth rates to form an array of filled pits. The method includes forming a portion of an overlayer on a second portion of the substrate adjacent to the array of pits at a second growth rate less than the first growth rate. The overlayer includes the portion of the overlayer on the second portion of the substrate and dopant disposed on the array of filled pits. The method includes removing the overlayer to expose the second portion of the substrate.

Dependencies are inferred from the claim text.