Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device

A silicon carbide substrate including a silicon carbide single-crystal substrate and a silicon carbide epitaxial film provided on the silicon carbide single-crystal substrate, the silicon carbide substrate comprising:

• an outer peripheral edge;
• and
• a main surface surrounded by the outer peripheral edge,
• wherein the main surface includes an outer peripheral region which is a region within 5 mm from the outer peripheral edge and a central region surrounded by the outer peripheral region, and
• a plurality of reference marks serving as references of two-dimensional position coordinates are provided in the outer peripheral region of the silicon carbide epitaxial film,
• a number of the plurality of reference marks is 2,
• a distance between the plurality of reference marks is 30 mm or more when viewed in a direction perpendicular to the main surface of the silicon carbide substrate.

A silicon carbide single-crystal substrate comprising:

• an outer peripheral edge;
• and
• a main surface surrounded by the outer peripheral edge,
• wherein the main surface includes an outer peripheral region which is a region within 5 mm from the outer peripheral edge and a central region surrounded by the outer peripheral region, and
• a plurality of reference marks serving as references of two-dimensional position coordinates are provided in the outer peripheral region,
• a number of the plurality of reference marks is 2,
• a distance between the plurality of reference marks is 30 mm or more when viewed in a direction perpendicular to the main surface of the silicon carbide substrate.