C30B 25/183
Being provided with a buffer layer
Official title: {being provided with a buffer layer, e.g. a lattice matching layer}
C30B25/183 (Being provided with a buffer layer) appears on 473 US grants and 699 published applications in this corpus.
Search patents in C30B- Granted patents
- 473
- Published applications
- 699
- Assignees
- 316
- Inventors
- 1,272
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 2 |
| 2003 | 4 | 4 |
| 2004 | 1 | 14 |
| 2005 | 4 | 10 |
| 2006 | 9 | 18 |
| 2007 | 5 | 15 |
| 2008 | 12 | 21 |
| 2009 | 6 | 11 |
| 2010 | 19 | 23 |
| 2011 | 9 | 28 |
| 2012 | 18 | 25 |
| 2013 | 18 | 37 |
| 2014 | 37 | 42 |
| 2015 | 32 | 49 |
| 2016 | 26 | 37 |
| 2017 | 30 | 32 |
| 2018 | 33 | 50 |
| 2019 | 39 | 32 |
| 2020 | 30 | 33 |
| 2021 | 21 | 39 |
| 2022 | 23 | 32 |
| 2023 | 21 | 46 |
| 2024 | 30 | 37 |
| 2025 | 23 | 38 |
| 2026 | 22 | 24 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films6 Oct 2026US 12,753,526 B2Wisconsin Alumni Research Foundation
- Superconducting compounds and methods for making the same8 Sep 2026US 12,733,409 B2Quantum Designed Materials Ltd.
- Growth method and structure of LED epitaxy1 Sep 2026US 12,727,286 B2Focus Lightings Tech (Suqian) Co., Ltd.
- Devices having and methods of forming thermally conductive substrates4 Aug 2026US 12,702,001 B2Akash Systems, Inc.
- Semiconductor structure and manufacturing method thereof28 Jul 2026US 12,692,622 B2Hon Young Semiconductor Corporation
- Buffer structures for mitigation of defects at device interfaces and methods for preparing the same27 Aug 2026US 2026/0255891 A1Nanotronics Imaging, Inc.
- Method for manufacturing a crystalline silicon carbide (sic)-based device27 Aug 2026US 2026/0255933 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- A method of forming a graphene layer structure and a graphene substrate6 Aug 2026US 2026/0226652 A1Paragraf Limited
- Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
- Gallium nitride crystal substrate and method for manufacturing gallium nitride crystal substrate30 Jul 2026US 2026/0218412 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Methods of forming films including germanium tin and structures and devices including the films500US 9,396,934 B2ASM IP Holding B. V. · 2016
- Structures and devices including germanium-tin films and methods of forming same470US 9,793,115 B2ASM IP Holding B. V. · 2017
- III-V nitride substrate boule and method of making and using the same249US 6,596,079 B1Advanced Technology Materials, Inc. · 2003
- Gallium nitride materials and methods249US 6,617,060 B2Nitronex Corporation · 2003
- Method for improved growth of semipolar (Al,In,Ga,B)N248US 7,691,658 B2Japan Science and Technology Agency · 2010