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US 12,692,622 B2Granted
Semiconductor structure and manufacturing method thereof
AssigneeHon Young Semiconductor Corporation
InventorsHung-Hsin Yen, Chin-Hung Chen
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Abstract
A semiconductor structure includes a silicon carbide substrate, a silicon carbide buffer layer, and an epitaxial layer. The silicon carbide buffer layer is disposed on the silicon carbide substrate. The epitaxial layer is disposed on the silicon carbide buffer layer, in which a molar ratio of carbon to silicon atoms in the silicon carbide buffer layer gradually increases along a direction from the silicon carbide substrate to the epitaxial layer.
Claims4
A semiconductor structure, comprising:
- a silicon carbide substrate;
- a silicon carbide buffer layer disposed on the silicon carbide substrate;
- and
- an epitaxial layer disposed on the silicon carbide buffer layer, wherein a molar ratio of carbon to silicon atoms in the silicon carbide buffer layer gradually increases along a direction from the silicon carbide substrate to the epitaxial layer.
1 more element
Dependencies are inferred from the claim text.