Method for manufacturing a crystalline silicon carbide (sic)-based device

A method for manufacturing a device comprising at least one so-called crystalline, preferably monocrystalline silicon carbide (SiC)-based, even constituted of crystalline, preferably monocrystalline silicon carbide (SIC) layer of interest, the manufacturing method comprising the following steps:

• Providing a so-called crystalline, preferably monocrystalline SiC-based, even constituted of crystalline, preferably monocrystalline SiC initial substrate, then
• Epitaxially growing, on the initial substrate, a so-called buffer layer with the basis of a material having, in the crystalline, preferably monocrystalline form:
• i. a mesh parameter equal, plus or minus 6%, preferably plus or minus 2%, to a mesh parameter of crystalline, preferably monocrystalline SiC, with the basis of which the initial substrate is constituted, and
• ii. a melting point strictly greater than 1600° C., preferably greater than 2000° C., and even more preferably, greater than or substantially equal to 2500° C., and melting point strictly greater than 1600° C., preferably greater than 2000° C., and even more preferably, greater than or substantially equal to 2500° C., and
• until the buffer layer has a thickness strictly greater than 2 nm, preferably greater than or equal to 4 nm, and strictly less than twice, preferably substantially equal to or less than, a critical thickness Ec beyond which defects or dislocations appear in the crude buffer layer,
• Epitaxially growing, on the buffer layer, at least the layer of interest, to obtain a stack successively comprising the initial substrate, the buffer layer and at least the layer of interest, the stack extending from a rear face carried by the initial substrate, up to a front face opposite the rear face, and
• Providing a so-called receiver substrate, then
• Transferring the stack through its front face onto the receiver substrate, then
• Insolating the stack, preferably through its rear face, with a laser radiation having a wavelength more absorbed by the buffer layer than by the crystalline, preferably monocrystalline SiC, with the basis of which the initial substrate is constituted, the laser radiation being configured to alter the buffer layer, so as to detach the initial substrate from the rest of the stack, by at least partially sacrificing the buffer layer, and thus obtaining a device comprising at least the layer of interest transferred onto the receiver substrate.