Methods of forming films including germanium tin and structures and devices including the films
AssigneeASM IP Holding B.V.
InventorJohn Tolle
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Abstract
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.
Claims20
A structure comprising a crystalline layer of germanium tin formed according to a method comprising the steps of:
- providing a gas-phase reactor;
- providing a substrate within a reaction chamber of the gas-phase reactor;
- and selectively forming a crystalline layer comprising germanium tin within a via formed within an insulating layer and on a surface of the substrate using one or more precursors comprising germane, wherein the germanium tin layer is between two layers of germanium silicon tin.
A structure comprising a crystalline layer of germanium tin, formed according to a method comprising the steps of:
- providing a gas-phase reactor;
- providing a substrate within a reaction chamber of the gas-phase reactor;
- and forming a crystalline layer comprising germanium tin on a surface of the substrate using one or more precursors comprising germane, wherein the germanium tin layer is between two layers of germanium silicon tin.
A method of forming a structure comprising a germanium-tin layer, the method comprising the steps of:
- providing a gas-phase reactor;
- providing a substrate within a reaction chamber of the gas-phase reactor;
- forming a crystalline layer comprising germanium tin on a surface of the substrate using one or more precursors comprising germane, wherein the germanium tin layer is between two layers of germanium silicon tin.
Dependencies are inferred from the claim text.