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US 9,793,115 B2Granted
Structures and devices including germanium-tin films and methods of forming same
AssigneeASM IP Holding B.V.
InventorJohn Tolle
Life of this patent
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Abstract
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.
Claims20
A method of forming a crystalline germanium-tin layer, the method comprising the steps of:
- providing a gas-phase reactor;
- providing a germane (GeH4) source coupled to the gas-phase reactor;
- providing a tin precursor source coupled to the gas-phase reactor;
- providing a substrate within a reaction chamber of the gas-phase reactor;
- providing germane and a tin precursor to the reaction chamber, wherein a volumetric ratio of the tin precursor to the germane is about 0.001 to about 0.1;
- and
- forming a crystalline layer of germanium tin on a surface of the substrate in a reaction chamber at a pressure between about 300 Torr and about 850 Torr, without using an etchant during the step of forming a crystalline layer.
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A method of forming a structure comprising a germanium-tin layer, the method comprising the steps of:
- forming an insulating layer overlying the substrate;
- forming a via within the insulating layer;
- providing a gas-phase reactor;
- providing a substrate within a reaction chamber of the gas-phase reactor;
- forming a crystalline layer comprising germanium tin on a surface of the substrate using one or more precursors comprising germane, wherein a pressure within the reaction chamber is between about 300 Torr and about 850 Torr;
- and
- selectively forming the crystalline layer comprising germanium tin within the via.
4 more elements
Dependencies are inferred from the claim text.