Growth method and structure of LED epitaxy

Abstract

A growth method of LED epitaxy comprises: providing a layer of substrate, wherein the substrate is an Al2O3 substrate or an Al2O3/SiO2 composite substrate; successively depositing and growing a SiC buffer layer and a u-GaN layer on the substrate; wherein the temperature used for depositing the SiC buffer layer is 650~1550 degrees; the gas used for depositing the SiC buffer layer is a silicon source gas and a carbon source gas, a flow rate of the silicon source gas is 1~1000 sccm, and a flow rate of the carbon source gas is 1~1000 sccm; a gas carrier gas used for depositing the SiC buffer layer has a flow rate of 10~500 slm; the SiC buffer layer is deposited at a pressure of 100~700 torr; the SiC buffer layer is deposited for a thickness of 10~1000 A.

Dependencies are inferred from the claim text.