C30B 25/186
Being specially pre-treated by
Official title: {being specially pre-treated by, e.g. chemical or physical means}
C30B25/186 (Being specially pre-treated by) appears on 431 US grants and 680 published applications in this corpus.
Search patents in C30B- Granted patents
- 431
- Published applications
- 680
- Assignees
- 289
- Inventors
- 1,304
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 1 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 1 |
| 2006 | 1 | 1 |
| 2007 | 0 | 3 |
| 2008 | 2 | 4 |
| 2009 | 1 | 3 |
| 2010 | 2 | 8 |
| 2011 | 3 | 21 |
| 2012 | 12 | 42 |
| 2013 | 13 | 24 |
| 2014 | 29 | 35 |
| 2015 | 22 | 45 |
| 2016 | 28 | 36 |
| 2017 | 36 | 63 |
| 2018 | 38 | 39 |
| 2019 | 49 | 31 |
| 2020 | 33 | 44 |
| 2021 | 31 | 33 |
| 2022 | 18 | 43 |
| 2023 | 19 | 54 |
| 2024 | 32 | 53 |
| 2025 | 39 | 57 |
| 2026 | 21 | 39 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition15 Sep 2026US 12,735,806 B2Xiamen University
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device25 Aug 2026US 12,720,830 B2Denso Corporation
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus28 Jul 2026US 12,692,623 B2Kokusai Electric Corporation
- Gallium base substrate, gallium nitride growth substrate, and manufacturing method of gallium nitride base substrate1 Oct 2026US 2026/0297805 A1Denso Corporation
- Apparatus and method of forming a colloid containing layer1 Oct 2026US 2026/0297808 A1APPLIED Materials.Inc.
- Systems and methods for heterogeneous diamond face synthesis for in-situ three-dimensional dopant and structure localization24 Sep 2026US 2026/0286569 A1The University of Chicago
- Diamond spin sensor and method of producing the same24 Sep 2026US 2026/0287689 A1Nissin Electric Co., Ltd.
- Film forming method and film forming apparatus10 Sep 2026US 2026/0265949 A1Tokyo Electron Limited
Most cited
By later US patents
- Plasma pre-clean module and process477US 9,299,557 B2ASM IP Holding B. V. · 2016
- Plasma pre-clean module and process474US 9,514,927 B2ASM IP Holding B. V. · 2016
- Method of making mosaic array of thin semiconductor material of large substrates171US 6,562,127 B1The United States of America as represented by the Secretary of the Navy · 2003
- Method of making bulk InGaN substrates and devices thereon39US 8,729,559 B2Soraa, Inc. · 2014
- Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same28US 7,416,604 B2Sumitomo Electric Industries, Ltd. · 2008