Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

A semiconductor device comprising, a nitride crystal substrate or an epilayer-containing nitride crystal substrate including one or more semiconductor layer(s) formed by epitaxial growth on at least one of main surface sides of said nitride crystal substrate,

• a light-emitting element including three or more semiconductor layers formed by epitaxial growth on one of the main surface sides of said nitride crystal substrate or said epilayer-containing nitride crystal substrate, a first electrode formed on the other main surface side of said nitride crystal substrate or said epilayer-containing nitride crystal substrate, a second electrode formed on the outermost semiconductor layer among said plurality of semiconductor layers,
• a conductor bearing said light-emitting element;
• and
• a substrate side of said light emitting element is a light emitting side, an outermost semiconductor layer side is a mount side, and said plurality of semiconductor layers include a p-type semiconductor layer, an n-type semiconductor layer and a light emitting layer formed between these conductive semiconductor layers, wherein
• in connection with plane spacing of arbitrary specific parallel crystal lattice planes of said nitride crystal substrate obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of said crystal while X-ray diffraction conditions of said specific parallel crystal lattice planes being satisfied, a uniform distortion at a surface layer of said crystal substrate represented by a value of |d1−d2|/d2 obtained from said plane spacing d1 at said X-ray penetration depth of 0.3 μm and said plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3.