Plasma pre-clean module and process
AssigneeASM IP Holding B.V.
InventorsJohn Tolle, Matthew G. Goodman, Robert Michael Vyne, Eric R. Hill
Life of this patent
Estimating the term…
Abstract
A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.
Claims22
A method for integrated circuit fabrication, the method comprising:
- removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
- depositing a halogen-containing material on the surface of the substrate in a reaction chamber;
- and
- sublimating the halogen-containing material, wherein sublimating the halogen-containing material comprises heating the surface of the substrate to a temperature of less than 100° C.
A method for integrated circuit fabrication, the method comprising:
- removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
- depositing a halogen-containing material on the surface of the substrate in a reaction chamber, wherein depositing the halogen-containing material comprises exposing the surface of the substrate to a reactant gas activated by a remote plasma source;
- and
- sublimating the halogen-containing material, wherein sublimating the halogen-containing material comprises heating the surface of the substrate to a temperature of 80° C. to 100° C.
Dependencies are inferred from the claim text.