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US 12,692,623 B2Granted
Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
AssigneeKokusai Electric Corporation
InventorsKaichiro Minami, Naonori Akae, Akito Hirano, Sadayasu Suyama, Takayuki Yamamoto, Shunsuke Asakura, Yugo Orihashi, Yasuhiro Megawa
Life of this patent
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Abstract
There is provided a technique that includes: (a) forming a modified layer by modifying at least a portion of an oxide film of a substrate by performing, a predetermined number of times: (a1) supplying a fluorine-containing gas to the substrate including the oxide film; and (a2) supplying a first reducing gas to the substrate; and (b) supplying the fluorine-containing gas to the substrate after the modified layer is formed.
Claims19
A method of processing a substrate, comprising:
- (a) forming a modified layer by modifying at least a portion of an oxide film of the substrate by performing, a predetermined number of times:
- (a1) supplying a fluorine-containing gas to the substrate including the oxide film;
- and
- (a2) supplying a first reducing gas to the substrate;
- and
- (b) supplying the fluorine-containing gas to the substrate after the modified layer is formed,
- wherein (a) and (b) are performed in a state where a temperature of the substrate is set at a first temperature, and
- wherein the method further comprises:
- (c) sublimating the modified layer by setting the temperature of the substrate to a second temperature equal to or higher than the first temperature;
- (d) raising the temperature of the substrate from the second temperature to a third temperature;
- (e) supplying a second reducing gas to the substrate in a state where the temperature of the substrate is set at the third temperature and (f) forming a predetermined element-containing film on the substrate by lowering the temperature of the substrate from the third temperature to a fourth temperature and supplying a gas containing a predetermined element to the substrate in a state where the temperature of the substrate is set at a fourth temperature wherein the fourth temperature is higher than the second temperature.
8 more elements
Dependencies are inferred from the claim text.