Plasma pre-clean module and process
AssigneeASM IP Holding B.V.
InventorsJohn Tolle, Matthew G. Goodman, Robert Michael Vyne, Eric R. Hill
Life of this patent
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Abstract
A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.
Claims39
A method for integrated circuit fabrication, the method comprising:
- removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
- depositing a halogen-containing material on the surface of the substrate in a first reaction chamber;
- transferring the substrate having the halogen-containing material to a second reaction chamber;
- and
- sublimating the halogen-containing material in the second reaction chamber, wherein sublimating the halogen-containing material comprises exposing the halogen-containing material to a plasma generated by a remote plasma unit;
- and
- subsequently depositing a conductive material on the surface of the substrate in the second reaction chamber.
A method for integrated circuit fabrication, the method comprising:
- removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
- depositing a halogen-containing material on the surface of the substrate in a first reaction chamber;
- transferrin the substrate having the halogen-containing material to a second reaction chamber;
- and
- sublimating the halogen-containing material in the second reaction chamber, wherein sublimating the halogen-containing material comprises heating the surface of the substrate to a temperature of about 80° C. to about 100° C.;
- and
- subsequently depositing a conductive material on the surface of the substrate in the second reaction chamber.
A method for integrated circuit fabrication, the method comprising:
- removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
- depositing a halogen-containing material on the surface of the substrate in a first reaction chamber;
- transferrin the substrate having the halogen-containing material to a second reaction chamber;
- and
- sublimating the halogen-containing material in the second reaction chamber,
- wherein the surface of the substrate further comprises silicon nitride, and wherein removing the silicon oxide material comprises selectively removing the silicon oxide material relative to the silicon nitride at a selectivity of about 7:1 to about 60:1;
- and
- subsequently depositing a conductive material on the surface of the substrate in the second reaction chamber.
A method for integrated circuit fabrication, the method comprising:
- removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
- depositing a halogen-containing material on the surface of the substrate in a first reaction chamber;
- transferring the substrate having the halogen-containing material to a second reaction chamber;
- and
- sublimating the halogen-containing material in the second reaction chamber, wherein sublimating the halogen-containing material comprises exposing the halogen-containing material to ultra-violet radiation;
- and
- subsequently depositing a conductive material on the surface of the substrate in the second reaction chamber.
A method for integrated circuit fabrication, the method comprising:
- removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
- depositing a first halogen-containing material on the surface of the substrate in a first reaction chamber;
- sublimating the first halogen-containing material in the first reaction chamber to remove a first portion of the silicon oxide material;
- depositing a second halogen-containing material on the surface of the substrate in the first reaction chamber to remove a second portion of the silicon oxide material;
- and
- sublimating the second halogen-containing material,
- wherein the surface of the substrate further comprises silicon nitride, and wherein removing the first portion of the silicon oxide material comprises selectively removing the first portion of the silicon oxide material relative to the silicon nitride with a selectivity of about 7:1 to about 20:1.
Dependencies are inferred from the claim text.