Method of making mosaic array of thin semiconductor material of large substrates

A method for making an array of thin single-crystal substrates on a handle substrate, comprising the steps:

• attaching a plurality of single-crystal substrates to a face of a support wafer;
• polishing said plurality of attached single-crystal substrates so that said single-crystal substrate surfaces are coplanar on said support surface and to a selected surface roughness;
• implanting hydrogen to a selected depth into said attached single-crystal substrates;
• bonding said polished and hydrogen implanted attached single-crystal substrates to a first handle substrate;
• and
• splitting said polished and hydrogen implanted attached single-crystal substrates at said selected depth thereby forming an array of thin single-crystal substrates on said first handle substrate and a support wafer having a remaining portion of said attached single-crystal substrates.

The method of claim, further comprising the step of:

• polishing said plurality of said attached remaining single-crystal substrates on said support wafer to a uniform thickness and to a selected surface roughness;
• implanting hydrogen to a selected depth into said attached remaining single-crystal substrates on said support wafer;
• bonding said remaining single-crystal substrates on said support wafer to a second handle substrate;
• splitting said polished and hydrogen implanted attached remaining single-crystal substrates to form a second array of thin single-crystal substrates on a second handle substrate and a support wafer having a remaining portion of attached single-crystal substrates.

A method for making an array of thin single-crystal substrates on a handle substrate, comprising:

• attaching a plurality of single-crystal substrates having an epitaxial layer grown on a surface of said plurality of single-crystal substrates to a face of a support wafer;
• polishing said plurality of attached single-crystal substrates so that said surfaces of said single-crystal substrates having an epitaxial layer are coplanar on said support wafer and to a selected surface roughness;
• implanting hydrogen to a selected depth into said epitaxial layer;
• bonding said polished and hydrogen implanted epitaxial layer to a first handle substrate;
• and
• splitting said polished and hydrogen implanted epitaxial layer at said selected depth;
• and
• forming an array of epitaxial material on said first handle substrate and a support wafer having a remaining portion of said attached single-crystal substrates and epitaxial layer.