Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors

A growth apparatus for atomic layer epitaxial (ALE) growth of thin films upon the surfaces of a plurality of substrates of the elemental semiconductors comprising:

• a growth reactor chamber means for securing said plurality of substrates therein to allow the growth of thin films upon said surfaces thereof;
• a purge means operatively connected to said growth reactor chamber means for evacuating all impurities therefrom and to purge clean said surfaces of said plurality of substrates;
• a heater means operatively connected to said growth reactor chamber means for maintaining a predetermined purge temperature within a range of purge temperatures, and a predetermined growth temperature within a range of growth temperatures on said surfaces of said plurality of substrates;
• a first reactant gas means operatively connected to said growth reactor chamber means for flooding thereof with a first reactant gas so as to expose said surfaces of said plurality of substrates thereto;
• a second reactant gas means operatively connected to said growth reactor chamber means for flooding thereof with a second reactant gas so as to expose said surfaces of said plurality of substrates thereto;
• and
• a differential pressure means operatively connected to said growth reactor chamber means for desorbing said surfaces of said plurality of substrates of all physisorbed species of said first and second reactant gases and for maintaining a predetermined purge pressure within a range of purge pressures and a predetermined growth pressure within a range of growth pressures in said growth reactor chamber means.