C30B 25/04
Pattern deposit
Official title: Pattern deposit, e.g. by using masks
C30B25/04 (Pattern deposit) appears on 278 US grants and 351 published applications in this corpus.
Search patents in C30B- Granted patents
- 278
- Published applications
- 351
- Assignees
- 178
- Inventors
- 753
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 2 |
| 2003 | 1 | 3 |
| 2004 | 3 | 0 |
| 2005 | 1 | 7 |
| 2006 | 2 | 6 |
| 2007 | 1 | 9 |
| 2008 | 5 | 12 |
| 2009 | 2 | 9 |
| 2010 | 5 | 5 |
| 2011 | 4 | 12 |
| 2012 | 9 | 11 |
| 2013 | 5 | 8 |
| 2014 | 6 | 16 |
| 2015 | 17 | 14 |
| 2016 | 10 | 14 |
| 2017 | 25 | 28 |
| 2018 | 19 | 17 |
| 2019 | 15 | 20 |
| 2020 | 16 | 15 |
| 2021 | 16 | 23 |
| 2022 | 13 | 27 |
| 2023 | 16 | 33 |
| 2024 | 20 | 24 |
| 2025 | 22 | 20 |
| 2026 | 13 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Control and localization of porosity in III-nitrides and methods of using and making thereof11 Aug 2026US 12,707,907 B2Yale University
- Carbon-containing cap layer for doped semiconductor epitaxial layer4 Aug 2026US 12,701,762 B2APPLIED Materials.Inc.
- Wavelength division multiplexing receiver28 Jul 2026US 12,693,555 B2Nokia Solutions and Networks Oy
- Multi-regional epitaxial growth and related systems and articles16 Jun 2026US 12,660,519 B2Massachusetts Institute of Technology
- Diamond spin sensor and method of producing the same24 Sep 2026US 2026/0287689 A1Nissin Electric Co., Ltd.
- High quality group-iii metal nitride crystals, methods of making, and methods of use20 Aug 2026US 2026/0247878 A1KYOCERA Corporation
- Method for manufacturing semiconductor device13 Aug 2026US 2026/0239774 A1KYOCERA Corporation
- Source/Drain Epitaxial Layers For Transistors30 Jul 2026US 2026/0223416 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Optical device and method of manufacture23 Jul 2026US 2026/0211183 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby260US 7,727,332 B2Freiberger Compound Materials GmbH · 2010
- Confined lateral selective epitaxial growth112US 4,948,456 ADelco Electronics Corporation · 1990
- Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same102US 6,809,351 B2NEC Corporation · 2004
- Selective epitaxial growth method98US 4,579,621 AMitsubishi Denki Kabushiki Kaisha · 1986