Optical device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Sey-Ping Sun, Shih Wei Liang
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Abstract
Optical devices and methods of manufacture are provided which form a first active layer of optical devices. After the first active layer of optical devices is formed, a second active layer of optical devices is manufactured over the first active layer of optical devices, wherein the second active layer of optical devices is formed to create the optical devices with crystalline material.
Claims20
A method of manufacturing an optical device, the method comprising:
- receiving a silicon wafer;
- forming first optical modulators, a first amplifier, and a first waveguide over the silicon wafer;
- treating the first optical modulators, the first amplifier, and the first waveguide to reduce defects;
- and
- after the treating, forming a second optical modulator, a second amplifier, and a second waveguide over the first optical modulators, the first amplifier, and the first waveguide, the second waveguide comprising a crystalline material.
A method of manufacturing an optical device, the method comprising:
- depositing a first core material at a first level;
- forming first optical modulators, a first amplifier, and a first waveguide from the first core material at the first level;
- after the forming, removing defects;
- after the removing the defects, epitaxially growing a second core material at a second level different from the first level, the second core material comprising a crystalline material;
- and
- patterning the second core material to form a second amplifier, a second optical modulator, and a second waveguide.
A method of manufacturing an optical device, the method comprising:
- forming multiple layers of first core material over a silicon substrate;
- patterning each of the multiple layers to form a plurality of optical devices, the plurality of optical devices comprising at least one optical modulator, at least one amplifier, and at least one waveguide;
- heating all of the first core material above at least 1,100° C.;
- after the heating, epitaxially growing silicon over the plurality of optical devices;
- and
- patterning the silicon into a second plurality of optical devices, the second plurality of optical devices comprising at least one second optical modulator, at least one second amplifier, and at least one second waveguide.
Dependencies are inferred from the claim text.