Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device from a semiconductor substrate, the semiconductor substrate comprising: a template substrate; a first semiconductor part being located above the template substrate and including a nitride semiconductor, wherein the first semiconductor part comprises a first initial wing portion including a N-polar surface facing an upper substrate of the template substrate through a void. The manufacturing method comprising introducing an etchant into the void, the etchant etching the N-polar surface of the first initial wing portion to form a first wing portion having a plurality of protrusions protruding toward the template substrate.

Dependencies are inferred from the claim text.