Selective epitaxial growth method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorShiro Hine
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Abstract
Disclosed herein is a selective epitaxial growth method for forming an opening, utilizing anisotropic dry etching, in a silicon oxide film formed on a silicon substrate and epitaxially growing a silicon layer selectively in the opening. The anisotropic dry etching is performed employing a mixed gas of carbon tetrafluoride and hydrogen, and the wall surface of the opening is perpendicular to the major surface of the silicon substrate. The epitaxial growth is achieved under a temperature of 900.degree. to 1100.degree. C. utilizing a mixed gas of a low pressure under 100 Torr. containing dichlorosilane as a silicon source and hydrogen as a carrier gas. A silicon layer thus obtained contains substantially no lattice defects such as a stacked fault.
Claims8
A selective epitaxial growth method of epitaxially growing a semiconductor layer selectively on the major surface of a semiconductor substrate, said selective epitaxial growth method comprising the steps of:
- preparing a semiconductor substrate;
- forming an insulating film on the major surface of said semiconductor substrate;
- forming a resist film having a predeterminied pattern on said insulating film;
- utilizing said resist film as a mask for performing anisotropic dry etching with respect to said insulating film, said anisotropic dry etching being performed by utilizing a mixed gas of carbon tetrafluoride and hydrogen as an etchant to thereby form an opening in and corresponding to said pattern in said insulating film, said opening having a peripheral vertical edge extending generally perpendicular to said major surface of said semiconductor substrate;
- and
- exposing said semiconductor substrate to a low-pressure gas containing a semiconductor element, thereby expitaxially growing a semiconductor layer containing said semiconductor element selectively in said opening, said epitaxially grown semiconductor layer being generally free of lattice defects along its periphery as a result of forming said opening with said peripheral vertical edge.
Dependencies are inferred from the claim text.