C23C 16/45538
Plasma being used continuously during the ald cycle
Official title: {Plasma being used continuously during the ALD cycle}
C23C16/45538 (Plasma being used continuously during the ald cycle) appears on 104 US grants and 162 published applications in this corpus.
Search patents in C23C- Granted patents
- 104
- Published applications
- 162
- Assignees
- 54
- Inventors
- 361
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 2 | 4 |
| 2003 | 1 | 1 |
| 2004 | 1 | 2 |
| 2005 | 2 | 9 |
| 2006 | 0 | 4 |
| 2007 | 0 | 3 |
| 2008 | 6 | 1 |
| 2009 | 2 | 3 |
| 2010 | 1 | 3 |
| 2011 | 4 | 6 |
| 2012 | 5 | 2 |
| 2013 | 1 | 2 |
| 2014 | 4 | 6 |
| 2015 | 4 | 10 |
| 2016 | 5 | 5 |
| 2017 | 8 | 8 |
| 2018 | 6 | 8 |
| 2019 | 7 | 10 |
| 2020 | 6 | 10 |
| 2021 | 7 | 11 |
| 2022 | 6 | 13 |
| 2023 | 6 | 7 |
| 2024 | 5 | 11 |
| 2025 | 8 | 18 |
| 2026 | 7 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Substrate processing method12 May 2026US 12,628,578 B2ASM IP Holding B. V.
- Deuterium-containing films28 Apr 2026US 12,616,006 B2APPLIED Materials.Inc.
- Atomic layer deposition and vapor deposition reactor with in-chamber microplasma source3 Mar 2026US 12,565,703 B2The Board of Trustees of the University of Illinois
- Method for depositing boron nitride24 Feb 2026US 12,559,837 B2ASM IP Holding B. V.
- Sealing structure and manufacturing method therefor24 Feb 2026US 12,559,838 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Plasma enhanced vapor deposition methods and systems for forming low-k material films1 Oct 2026US 2026/0297745 A1ASM IP Holding B. V.
- Atomic layer deposition with carbon inhibition profile tuning10 Sep 2026US 2026/0271635 A1APPLIED Materials.Inc.
- Method to deposit a silicon carbide layer28 May 2026US 2026/0146321 A1ASM IP Holding B. V.
- Film forming method2 Apr 2026US 2026/0092367 A1Tokyo Electron Limited
- Selective material deposition8 Jan 2026US 2026/0011571 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)717US 6,428,859 B1Angstron Systems, Inc. · 2002
- Lid assembly for a processing system to facilitate sequential deposition techniques697US 6,878,206 B2APPLIED Materials.Inc. · 2005
- Plasma enhanced pulsed layer deposition613US 6,689,220 B1Simplus Systems Corporation · 2004
- Method of forming stress-tuned dielectric film having Si-N bonds by modified PEALD526US 8,334,219 B2ASM Japan K .K. · 2012
- Pulsed remote plasma method and system476US 9,484,191 B2ASM IP Holding B. V. · 2016