C23C 16/45527
Characterized by the ald cycle
Official title: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
C23C16/45527 (Characterized by the ald cycle) appears on 3,329 US grants and 5,066 published applications in this corpus.
Search patents in C23C- Granted patents
- 3,329
- Published applications
- 5,066
- Assignees
- 594
- Inventors
- 5,805
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 6 | 11 |
| 2002 | 20 | 56 |
| 2003 | 37 | 69 |
| 2004 | 46 | 86 |
| 2005 | 45 | 122 |
| 2006 | 70 | 156 |
| 2007 | 45 | 141 |
| 2008 | 87 | 145 |
| 2009 | 83 | 102 |
| 2010 | 98 | 94 |
| 2011 | 97 | 103 |
| 2012 | 88 | 131 |
| 2013 | 90 | 134 |
| 2014 | 112 | 163 |
| 2015 | 126 | 209 |
| 2016 | 169 | 201 |
| 2017 | 150 | 222 |
| 2018 | 159 | 257 |
| 2019 | 195 | 268 |
| 2020 | 205 | 307 |
| 2021 | 180 | 344 |
| 2022 | 227 | 410 |
| 2023 | 211 | 376 |
| 2024 | 260 | 321 |
| 2025 | 310 | 380 |
| 2026 | 193 | 258 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- C23C 16/45536Use of plasma, radiation or electromagnetic fields1,705
- C23C 16/45531Specially adapted for making ternary or higher compositions681
- C23C 16/45534Use of auxiliary reactants other than used for contributing to the composition497
- C23C 16/45529Specially adapted for making a layer stack of alternating different compositions or450
Recent patents
- Method of manufacturing a redistribution layer, redistribution layer, integrated circuit and methods for electrically testing and protecting the integrated circuit6 Oct 2026US 12,753,493 B2STMicroelectronics S,r.l.
- Method of forming a layer by ALD6 Oct 2026US 12,753,497 B2ASM IP Holding B. V.
- Calorimetry method to measure chemical reaction heat in ALD/ALE processes using temperature-sensitive resistance coatings6 Oct 2026US 12,753,510 B2Uchicago Argonne, LLC
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method for etching an etch layer6 Oct 2026US 12,757,660 B2Lam Research Corporation
- Area selective deposition of metal film on silicon containing surfaces utilizing alcohols8 Oct 2026US 2026/0308761 A1Merck Patent GmbH
- Process for preparing of transition metal-containing films8 Oct 2026US 2026/0308762 A1BASF SE
- Substrate processing apparatus1 Oct 2026US 2026/0297737 A1Tokyo Electron Limited
- Processing method, method of manufacturing semiconductor device, recording medium, and processing apparatus1 Oct 2026US 2026/0297742 A1Kokusai Electric Corporation
- Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium1 Oct 2026US 2026/0297743 A1Kokusai Electric Corporation
Most cited
By later US patents
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Apparatus and method for growth of a thin film940US 6,511,539 B1ASM America, Inc. · 2003
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001