C23C 16/45531
Specially adapted for making ternary or higher compositions
Official title: {specially adapted for making ternary or higher compositions}
C23C16/45531 (Specially adapted for making ternary or higher compositions) appears on 681 US grants and 925 published applications in this corpus.
Search patents in C23C- Granted patents
- 681
- Published applications
- 925
- Assignees
- 188
- Inventors
- 1,301
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 4 |
| 2002 | 6 | 15 |
| 2003 | 14 | 22 |
| 2004 | 13 | 39 |
| 2005 | 15 | 54 |
| 2006 | 25 | 59 |
| 2007 | 15 | 44 |
| 2008 | 36 | 50 |
| 2009 | 31 | 36 |
| 2010 | 35 | 28 |
| 2011 | 33 | 35 |
| 2012 | 28 | 32 |
| 2013 | 32 | 33 |
| 2014 | 34 | 41 |
| 2015 | 34 | 45 |
| 2016 | 60 | 40 |
| 2017 | 34 | 37 |
| 2018 | 29 | 38 |
| 2019 | 33 | 37 |
| 2020 | 24 | 37 |
| 2021 | 25 | 31 |
| 2022 | 31 | 41 |
| 2023 | 23 | 31 |
| 2024 | 30 | 27 |
| 2025 | 28 | 40 |
| 2026 | 9 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Superconducting compounds and methods for making the same8 Sep 2026US 12,733,409 B2Quantum Designed Materials Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Composition, precursor composition including same, and method of manufacturing thin film using same precursor composition2 Jun 2026US 12,644,181 B2Hansol Chemical Co., Ltd.
- Multilayer ALD coating for critical components in process chamber26 May 2026US 12,637,764 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Systems, devices, and methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen12 May 2026US 12,624,448 B2ASM IP Holding B. V.
- Method of forming gallium oxynitride layer1 Oct 2026US 2026/0297744 A1Jusung Engineering Co., Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus20 Aug 2026US 2026/0242944 A1Kokusai Electric Corporation
- Method of manufacturing molybdenum film13 Aug 2026US 2026/0234796 A1Foundation for Research and Business, Seoul National University of Science and Technology
- Method of manufacturing magnesium indium oxide thin films23 Jul 2026US 2026/0209937 A1Entegris, Inc.
- Deposition of yttrium carbide (yc) film9 Jul 2026US 2026/0193774 A1L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude
Most cited
By later US patents
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Sequential chemical vapor deposition671US 6,652,924 B2Licensee for Microelectronics: ASM America, Inc. · 2003
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006