Sequential chemical vapor deposition
AssigneeLicensee for Microelectronics: ASM America, Inc.
InventorArthur Sherman
Life of this patent
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Abstract
The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.
Claims15
A process of growing a thin film by a sequential vapor deposition process, comprising the steps of:
- placing a part in a chamber;
- removing gases from the chamber;
- exposing the part to a gaseous first reactant, including an element of the thin film to be formed, wherein the first reactant adsorbs on the part in a self-limiting manner;
- removing gases from the chamber;
- exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to one or more elements, wherein a conductive or insulating thin film is formed;
- and
- removing gases from the chamber.
A process of growing a thin film by a vapor deposition process, comprising the steps of:
- placing a part in a chamber;
- and
- a plurality of cycles, each cycle comprising:
- exposing the part to a gaseous first reactant, containing a metal element, wherein the first reactant adsorbs on the part in a self-limiting manner;
- removing excess first reactant gases from the chamber;
- exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to the metal element;
- and
- removing excess second reactant gases from the chamber.
A process of growing a thin film by a repetitive vapor deposition process, which comprises:
- placing a part in a chamber;
- and
- a plurality of cycles, each cycle comprising:
- exposing the part to a gaseous first reactant including an element selected from the group consisting of Si and Ge, wherein a portion of the first reactant adsorbs on the part in a self-limiting manner;
- removing gases from the chamber;
- exposing the part, coated with the portion of the first reactant, to a gaseous second reactant of radicals selected from the group consisting of O and N, wherein the radicals convert the portion of the first reactant on the part to a thin film selected from the group consisting of silicon nitride, silicon oxide, germanium nitride, germanium oxide;
- and
- removing excess second reactant gases from the chamber.
Dependencies are inferred from the claim text.