Method of forming gallium oxynitride layer

A method of forming a gallium oxynitride layer comprising:

• a process of forming a first gallium oxynitride layer on a substrate;
• and
• a process of forming a second gallium oxynitride layer on the first gallium oxynitride layer,
• wherein any one of the process of forming the first gallium oxynitride layer and the process of forming the second gallium oxynitride layer uses an atomic layer deposition method (ALD), and another one of the process of forming the first gallium oxynitride layer and the process of forming the second gallium oxynitride layer uses a chemical vaporization deposition method (CVD).

A method of forming a gallium oxynitride layer in a chamber including an upper dome, a lower dome and a heater comprising:

• a process of injecting a source material containing gallium (Ga) onto a substrate disposed in the chamber;
• a process of forming a gallium nitride layer by injecting a first reactant material containing nitrogen;
• and
• a process of forming the gallium oxynitride layer by injecting a second reactant material containing oxygen onto the gallium nitride layer.