Systems, devices, and methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen

A method of forming a layer comprising a group 14 element, a pnictogen, and a chalcogen, the method comprising:

• providing a substrate to a reaction chamber;
• and
• executing a plurality of deposition cycles, at least one deposition cycle of the plurality of deposition cycles comprises a first sub cycle and a second sub cycle,
• the first sub cycle comprising a first group 14 element pulse, a first pnictogen pulse, and a first chalcogen pulse, wherein
• the first group 14 element pulse comprises providing a first group 14 element precursor to the reaction chamber;
• the first pnictogen pulse comprises providing a first pnictogen precursor to the reaction chamber;
• and,
• the first chalcogen pulse comprises providing a first chalcogen precursor to the reaction chamber,
• the second sub cycle comprising a second group 14 element pulse, a second pnictogen pulse, and a second chalcogen pulse, wherein
• the second group 14 element pulse comprises providing a second group 14 element precursor to the reaction chamber;
• the second pnictogen pulse comprises providing a second pnictogen precursor to the reaction chamber;
• and,
• the second chalcogen pulse comprises providing a second chalcogen precursor to the reaction chamber,
• wherein the first group 14 element precursor is different from the second group 14 element precursor, wherein the first group 14 element precursor comprises a first germanium precursor and the second group 14 element precursor comprises a second germanium precursor, wherein at least one of the first germanium precursor and the second germanium precursor comprises a germanium amidinate or a germanium amide,
• and/or
• wherein the first pnictogen precursor is different from the second pnictogen precursor, wherein the first pnictogen precursor comprises a first antimony precursor and the second pnictogen precursor comprises a second antimony precursor, wherein at least one of the first antimony precursor and the second antimony precursor independently comprises a compound selected from the group consisting of a silyl antimonide, an antimony amide, and a heteroleptic antimony precursor comprising an alkylsilyl group and a halogen.