C23C 16/45529
Specially adapted for making a layer stack of alternating different compositions or
Official title: {specially adapted for making a layer stack of alternating different compositions or gradient compositions}
C23C16/45529 (Specially adapted for making a layer stack of alternating different compositions or) appears on 450 US grants and 634 published applications in this corpus.
Search patents in C23C- Granted patents
- 450
- Published applications
- 634
- Assignees
- 179
- Inventors
- 1,240
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 2 |
| 2002 | 2 | 5 |
| 2003 | 9 | 14 |
| 2004 | 8 | 17 |
| 2005 | 13 | 40 |
| 2006 | 14 | 37 |
| 2007 | 18 | 34 |
| 2008 | 26 | 35 |
| 2009 | 27 | 21 |
| 2010 | 23 | 14 |
| 2011 | 23 | 18 |
| 2012 | 19 | 16 |
| 2013 | 10 | 17 |
| 2014 | 18 | 21 |
| 2015 | 18 | 24 |
| 2016 | 19 | 20 |
| 2017 | 25 | 24 |
| 2018 | 9 | 20 |
| 2019 | 13 | 31 |
| 2020 | 16 | 23 |
| 2021 | 18 | 27 |
| 2022 | 21 | 39 |
| 2023 | 17 | 39 |
| 2024 | 27 | 36 |
| 2025 | 34 | 32 |
| 2026 | 22 | 28 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method of forming a layer by ALD6 Oct 2026US 12,753,497 B2ASM IP Holding B. V.
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Semiconductor doping method and an intermediate semiconductor device29 Sep 2026US 12,751,221 B2Beneq Oy
- Environmental barrier coating and method of applying the same15 Sep 2026US 12,735,365 B2Rtx Corporation
- Multi-region diffusion barrier containing titanium, silicon and nitrogen9 Jun 2026US 12,653,008 B2Eugenus, Inc.
- Multilayer ald coating for critical components in process chamber24 Sep 2026US 2026/0286513 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming electrode24 Sep 2026US 2026/0290652 A1Jusung Engineering Co., Ltd.
- A plasma etch-resistant film and a method for its fabrication17 Sep 2026US 2026/0279736 A1Beneq Oy
- Fluoride coating to improve chamber performance13 Aug 2026US 2026/0237610 A1APPLIED Materials.Inc.
- Method of forming a gate stack including a dielectric layer13 Aug 2026US 2026/0239899 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate767US 6,420,279 B1Sharp Laboratories of America, Inc. · 2002
- Sequential chemical vapor deposition671US 6,652,924 B2Licensee for Microelectronics: ASM America, Inc. · 2003
- Method of forming a thin film in a semiconductor device626US 6,730,614 B1Electronics and Telecommunications Research Institute · 2004