A plasma etch-resistant film and a method for its fabrication
AssigneeBeneq Oy
InventorsLassi Leppilahti, Mikko Saikkonen
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Abstract
A method for fabricating a plasma etch-resistant film on a surface of a substrate is disclosed. The method comprises the steps of forming, in a reaction space by exposing a deposition surface to alternately repeated, essentially self-limiting surface reactions of precursors, one precursor at a time, —an intermediate layer of dielectric material on the surface of the substrate, and—a protective layer on the intermediate layer, to form a plasma etch-resistant film for hindering current passing through the plasma-etch resistant film to the substrate. Further is disclosed a plasma etch-resistant film and uses thereof.
Claims21
A method for fabricating a plasma etch-resistant film on a surface of a substrate, wherein the method comprises the steps of forming, in a reaction space by exposing a deposition surface to alternately repeated, essentially self-limiting surface reactions of precursors, one precursor at a time,
- an intermediate layer of dielectric material on the surface of the substrate, wherein the dielectric material is a nanolaminate of two or more different metal oxides, and wherein the thickness of the intermediate layer is 100-500 nm, and
- a protective layer on the intermediate layer, wherein the material of the protective layer is selected from a group consisting of a rare earth metal oxide, a rare earth metal fluoride, a rare earth metal oxyfluoride, and any combination or mixture thereof, and wherein the thickness of the protective layer is 100-3000 nm,
- to form a plasma etch-resistant film for hindering current passing through the plasma-etch resistant film to the substrate.
A plasma etch-resistant film on a surface of a substrate, wherein the plasma etch-resistant film comprises:
- an intermediate layer of dielectric material on the surface of the substrate, wherein the dielectric material is a nanolaminate of two or more different metal oxides, the intermediate layer having a thickness of 100-500 nm, and
- a protective layer on the intermediate layer, wherein the protective layer comprises a material selected from a group consisting of a rare earth metal oxide, a rare earth metal fluoride, a rare earth metal oxyfluoride, and any combination or mixture thereof, the protective layer having a thickness of 100-3000 nm, and
- wherein the plasma etch-resistant film hinders current passing through the plasma-etch resistant film to the substrate.
Dependencies are inferred from the claim text.